Design of low power CMOS ultra wide band low noise amplifier using noise canceling technique

This paper presents a design of a low power CMOS ultra-wideband (UWB) low noise amplifier (LNA) using a noise canceling technique with the TSMC 0.18 μm RF CMOS process. The proposed UWB LNA employs a current-reused structure to decrease the total power consumption instead of using a cascade stage. This structure spends the same DC current for operating two transistors simultaneously. The stagger-tuning technique, which was reported to achieve gain flatness in the required frequency, was adopted to have low and high resonance frequency points over the entire bandwidth from 3.1 to 10.6 GHz. The resonance points were set in 3 GHz and 10 GHz to provide enough gain flatness and return loss. In addition, the noise canceling technique was used to cancel the dominant noise source, which is generated by the first transistor. The simulation results show a flat gain (S₂₁>10 dB) with a good input impedance matching less than -10 dB and a minimum noise figure of 2.9 dB over the entire band. The proposed UWB LNA consumed 15.2 mW from a 1.8 V power supply.