Design optimization of back-gated thin-body silicon-on-insulator capacitorless dynamic random access memory cell

Min Hee Cho; Changhwan Shin; Tsu Jae King Liu

doi:10.1143/JJAP.51.02BD02

Design optimization of back-gated thin-body silicon-on-insulator capacitorless dynamic random access memory cell

Min Hee Cho^*
, Changhwan Shin
, Tsu Jae King Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Highly scaled (22 nm-node) capacitorless single-transistor dynamic random access memory (DRAM) cell design is investigated via technology computer-aided design (TCAD) simulations. It is found that the gate-sidewall spacer width and operating voltages can be adjusted to reduce bandto- band tunneling (BTBT) and thereby increase data retention time for bipolar junction transistor (BJT)-based operation. Read current variations due to random dopant fluctuations (RDF) are investigated via three-dimensional Kinetic Monte Carlo (KMC) simulations. It is found that BJT-based operation is more robust to RDF effects than metal-oxide-semiconductor field-effect transistor (MOSFET)-based operation.

Original language	English
Article number	02BD02
Journal	Japanese journal of applied physics
Volume	51
Issue number	2 PART 2
DOIs	https://doi.org/10.1143/JJAP.51.02BD02
Publication status	Published - 2012 Feb
Externally published	Yes

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/JJAP.51.02BD02

Cite this

@article{7a5e276e7c8e4c42bf52db7869efd3bf,

title = "Design optimization of back-gated thin-body silicon-on-insulator capacitorless dynamic random access memory cell",

abstract = "Highly scaled (22 nm-node) capacitorless single-transistor dynamic random access memory (DRAM) cell design is investigated via technology computer-aided design (TCAD) simulations. It is found that the gate-sidewall spacer width and operating voltages can be adjusted to reduce bandto- band tunneling (BTBT) and thereby increase data retention time for bipolar junction transistor (BJT)-based operation. Read current variations due to random dopant fluctuations (RDF) are investigated via three-dimensional Kinetic Monte Carlo (KMC) simulations. It is found that BJT-based operation is more robust to RDF effects than metal-oxide-semiconductor field-effect transistor (MOSFET)-based operation.",

author = "Cho, \{Min Hee\} and Changhwan Shin and Liu, \{Tsu Jae King\}",

year = "2012",

month = feb,

doi = "10.1143/JJAP.51.02BD02",

language = "English",

volume = "51",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "2 PART 2",

}

TY - JOUR

T1 - Design optimization of back-gated thin-body silicon-on-insulator capacitorless dynamic random access memory cell

AU - Cho, Min Hee

AU - Shin, Changhwan

AU - Liu, Tsu Jae King

PY - 2012/2

Y1 - 2012/2

N2 - Highly scaled (22 nm-node) capacitorless single-transistor dynamic random access memory (DRAM) cell design is investigated via technology computer-aided design (TCAD) simulations. It is found that the gate-sidewall spacer width and operating voltages can be adjusted to reduce bandto- band tunneling (BTBT) and thereby increase data retention time for bipolar junction transistor (BJT)-based operation. Read current variations due to random dopant fluctuations (RDF) are investigated via three-dimensional Kinetic Monte Carlo (KMC) simulations. It is found that BJT-based operation is more robust to RDF effects than metal-oxide-semiconductor field-effect transistor (MOSFET)-based operation.

AB - Highly scaled (22 nm-node) capacitorless single-transistor dynamic random access memory (DRAM) cell design is investigated via technology computer-aided design (TCAD) simulations. It is found that the gate-sidewall spacer width and operating voltages can be adjusted to reduce bandto- band tunneling (BTBT) and thereby increase data retention time for bipolar junction transistor (BJT)-based operation. Read current variations due to random dopant fluctuations (RDF) are investigated via three-dimensional Kinetic Monte Carlo (KMC) simulations. It is found that BJT-based operation is more robust to RDF effects than metal-oxide-semiconductor field-effect transistor (MOSFET)-based operation.

UR - https://www.scopus.com/pages/publications/84857473599

U2 - 10.1143/JJAP.51.02BD02

DO - 10.1143/JJAP.51.02BD02

M3 - Article

AN - SCOPUS:84857473599

SN - 0021-4922

VL - 51

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 2 PART 2

M1 - 02BD02

ER -

Design optimization of back-gated thin-body silicon-on-insulator capacitorless dynamic random access memory cell

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this