Abstract
We report a simple, solution-based, postsynthetic colloidal, atomic layer deposition (PS-cALD) process to engineer stepwise the surface stoichiometry and therefore the electronic properties of lead chalcogenide nanocrystal (NC) thin films integrated in devices. We found that unlike chalcogen-enriched NC surfaces that are structurally, optically, and electronically unstable, lead chloride treatment creates a well-passivated shell that stabilizes the NCs. Using PS-cALD of lead chalcogenide NC thin films we demonstrate high electron field-effect mobilities of ∼4.5 cm2/(V s).
Original language | English |
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Pages (from-to) | 1559-1566 |
Number of pages | 8 |
Journal | Nano Letters |
Volume | 14 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2014 Mar 12 |
Externally published | Yes |
Keywords
- Lead chalcogenide
- colloidal atomic layer deposition
- field-effect transistor
- nanocrystals
- solution-process
- stoichiometry
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering