Designing high-performance PbS and PbSe nanocrystal electronic devices through stepwise, post-synthesis, colloidal atomic layer deposition

Soong Ju Oh; Nathaniel E. Berry; Ji Hyuk Choi; E. Ashley Gaulding; Hangfei Lin; Taejong Paik; Benjamin T. Diroll; Shin Muramoto; Christopher B. Murray; Cherie R. Kagan

doi:10.1021/nl404818z

Designing high-performance PbS and PbSe nanocrystal electronic devices through stepwise, post-synthesis, colloidal atomic layer deposition

Soong Ju Oh, Nathaniel E. Berry, Ji Hyuk Choi, E. Ashley Gaulding, Hangfei Lin, Taejong Paik, Benjamin T. Diroll, Shin Muramoto, Christopher B. Murray, Cherie R. Kagan

Research output: Contribution to journal › Article › peer-review

167 Citations (Scopus)

Abstract

We report a simple, solution-based, postsynthetic colloidal, atomic layer deposition (PS-cALD) process to engineer stepwise the surface stoichiometry and therefore the electronic properties of lead chalcogenide nanocrystal (NC) thin films integrated in devices. We found that unlike chalcogen-enriched NC surfaces that are structurally, optically, and electronically unstable, lead chloride treatment creates a well-passivated shell that stabilizes the NCs. Using PS-cALD of lead chalcogenide NC thin films we demonstrate high electron field-effect mobilities of ∼4.5 cm²/(V s).

Original language	English
Pages (from-to)	1559-1566
Number of pages	8
Journal	Nano Letters
Volume	14
Issue number	3
DOIs	https://doi.org/10.1021/nl404818z
Publication status	Published - 2014 Mar 12
Externally published	Yes

Keywords

Lead chalcogenide
colloidal atomic layer deposition
field-effect transistor
nanocrystals
solution-process
stoichiometry

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

Access to Document

10.1021/nl404818z

Cite this

@article{d5c152ceb5bb40cc842bff9b9ceddd1f,

title = "Designing high-performance PbS and PbSe nanocrystal electronic devices through stepwise, post-synthesis, colloidal atomic layer deposition",

abstract = "We report a simple, solution-based, postsynthetic colloidal, atomic layer deposition (PS-cALD) process to engineer stepwise the surface stoichiometry and therefore the electronic properties of lead chalcogenide nanocrystal (NC) thin films integrated in devices. We found that unlike chalcogen-enriched NC surfaces that are structurally, optically, and electronically unstable, lead chloride treatment creates a well-passivated shell that stabilizes the NCs. Using PS-cALD of lead chalcogenide NC thin films we demonstrate high electron field-effect mobilities of ∼4.5 cm2/(V s).",

keywords = "Lead chalcogenide, colloidal atomic layer deposition, field-effect transistor, nanocrystals, solution-process, stoichiometry",

author = "Oh, {Soong Ju} and Berry, {Nathaniel E.} and Choi, {Ji Hyuk} and Gaulding, {E. Ashley} and Hangfei Lin and Taejong Paik and Diroll, {Benjamin T.} and Shin Muramoto and Murray, {Christopher B.} and Kagan, {Cherie R.}",

year = "2014",

month = mar,

day = "12",

doi = "10.1021/nl404818z",

language = "English",

volume = "14",

pages = "1559--1566",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "3",

}

TY - JOUR

T1 - Designing high-performance PbS and PbSe nanocrystal electronic devices through stepwise, post-synthesis, colloidal atomic layer deposition

AU - Oh, Soong Ju

AU - Berry, Nathaniel E.

AU - Choi, Ji Hyuk

AU - Gaulding, E. Ashley

AU - Lin, Hangfei

AU - Paik, Taejong

AU - Diroll, Benjamin T.

AU - Muramoto, Shin

AU - Murray, Christopher B.

AU - Kagan, Cherie R.

PY - 2014/3/12

Y1 - 2014/3/12

N2 - We report a simple, solution-based, postsynthetic colloidal, atomic layer deposition (PS-cALD) process to engineer stepwise the surface stoichiometry and therefore the electronic properties of lead chalcogenide nanocrystal (NC) thin films integrated in devices. We found that unlike chalcogen-enriched NC surfaces that are structurally, optically, and electronically unstable, lead chloride treatment creates a well-passivated shell that stabilizes the NCs. Using PS-cALD of lead chalcogenide NC thin films we demonstrate high electron field-effect mobilities of ∼4.5 cm2/(V s).

AB - We report a simple, solution-based, postsynthetic colloidal, atomic layer deposition (PS-cALD) process to engineer stepwise the surface stoichiometry and therefore the electronic properties of lead chalcogenide nanocrystal (NC) thin films integrated in devices. We found that unlike chalcogen-enriched NC surfaces that are structurally, optically, and electronically unstable, lead chloride treatment creates a well-passivated shell that stabilizes the NCs. Using PS-cALD of lead chalcogenide NC thin films we demonstrate high electron field-effect mobilities of ∼4.5 cm2/(V s).

KW - Lead chalcogenide

KW - colloidal atomic layer deposition

KW - field-effect transistor

KW - nanocrystals

KW - solution-process

KW - stoichiometry

UR - http://www.scopus.com/inward/record.url?scp=84896321890&partnerID=8YFLogxK

U2 - 10.1021/nl404818z

DO - 10.1021/nl404818z

M3 - Article

AN - SCOPUS:84896321890

SN - 1530-6984

VL - 14

SP - 1559

EP - 1566

JO - Nano Letters

JF - Nano Letters

IS - 3

ER -

Designing high-performance PbS and PbSe nanocrystal electronic devices through stepwise, post-synthesis, colloidal atomic layer deposition

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this