Detector performance and defect densities in CdZnTe after two-step annealing

Eunhye Kim; Yonghoon Kim; A. E. Bolotnikov; R. B. James; Kihyun Kim

doi:10.1016/j.nima.2019.01.064

Detector performance and defect densities in CdZnTe after two-step annealing

Eunhye Kim, Yonghoon Kim, A. E. Bolotnikov, R. B. James, Kihyun Kim

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Defects both microscale and nanoscale are play an important role in CdZnTe (CZT) device performance. Typical micro-scale defects such as Te inclusions were removed via a two-step annealing process, and their concentration was analyzed via IR transmission microscopy. In addition, transmission electron microscopy (TEM) measurement was employed to investigate the evolution of nano-scale defects after the annealing process. Dislocation and stacking faults were commonly observed defects in as-grown and annealed CZT. The line shape defects, which are possibly related to the stress field around dislocations, disappeared during the in-situ the annealing at 200–220 °C. A Frisch-grid CZT detector made via the two-step annealing process exhibited improved energy resolution and low backscattering counts in Cs-137 gamma spectra.

Original language	English
Pages (from-to)	51-54
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	923
DOIs	https://doi.org/10.1016/j.nima.2019.01.064
Publication status	Published - 2019 Apr 11

Bibliographical note

Publisher Copyright:
© 2019 Elsevier B.V.

Keywords

Annealing
CdZnTe
Dislocation
Microscale defects
Nanoscale defects
Stacking fault

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2019.01.064

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title = "Detector performance and defect densities in CdZnTe after two-step annealing",

abstract = "Defects both microscale and nanoscale are play an important role in CdZnTe (CZT) device performance. Typical micro-scale defects such as Te inclusions were removed via a two-step annealing process, and their concentration was analyzed via IR transmission microscopy. In addition, transmission electron microscopy (TEM) measurement was employed to investigate the evolution of nano-scale defects after the annealing process. Dislocation and stacking faults were commonly observed defects in as-grown and annealed CZT. The line shape defects, which are possibly related to the stress field around dislocations, disappeared during the in-situ the annealing at 200–220 °C. A Frisch-grid CZT detector made via the two-step annealing process exhibited improved energy resolution and low backscattering counts in Cs-137 gamma spectra.",

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AU - Bolotnikov, A. E.

AU - James, R. B.

AU - Kim, Kihyun

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Detector performance and defect densities in CdZnTe after two-step annealing

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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