Abstract
Defects both microscale and nanoscale are play an important role in CdZnTe (CZT) device performance. Typical micro-scale defects such as Te inclusions were removed via a two-step annealing process, and their concentration was analyzed via IR transmission microscopy. In addition, transmission electron microscopy (TEM) measurement was employed to investigate the evolution of nano-scale defects after the annealing process. Dislocation and stacking faults were commonly observed defects in as-grown and annealed CZT. The line shape defects, which are possibly related to the stress field around dislocations, disappeared during the in-situ the annealing at 200–220 °C. A Frisch-grid CZT detector made via the two-step annealing process exhibited improved energy resolution and low backscattering counts in Cs-137 gamma spectra.
Original language | English |
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Pages (from-to) | 51-54 |
Number of pages | 4 |
Journal | Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
Volume | 923 |
DOIs | |
Publication status | Published - 2019 Apr 11 |
Keywords
- Annealing
- CdZnTe
- Dislocation
- Microscale defects
- Nanoscale defects
- Stacking fault
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation