Detector performance and defect densities in CdZnTe after two-step annealing

Eunhye Kim; Yonghoon Kim; A. E. Bolotnikov; R. B. James; Kihyun Kim

doi:10.1016/j.nima.2019.01.064

Detector performance and defect densities in CdZnTe after two-step annealing

Eunhye Kim, Yonghoon Kim, A. E. Bolotnikov, R. B. James, Kihyun Kim

School of Health and Environmental Science

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Defects both microscale and nanoscale are play an important role in CdZnTe (CZT) device performance. Typical micro-scale defects such as Te inclusions were removed via a two-step annealing process, and their concentration was analyzed via IR transmission microscopy. In addition, transmission electron microscopy (TEM) measurement was employed to investigate the evolution of nano-scale defects after the annealing process. Dislocation and stacking faults were commonly observed defects in as-grown and annealed CZT. The line shape defects, which are possibly related to the stress field around dislocations, disappeared during the in-situ the annealing at 200–220 °C. A Frisch-grid CZT detector made via the two-step annealing process exhibited improved energy resolution and low backscattering counts in Cs-137 gamma spectra.

Original language	English
Pages (from-to)	51-54
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	923
DOIs	https://doi.org/10.1016/j.nima.2019.01.064
Publication status	Published - 2019 Apr 11

Keywords

Annealing
CdZnTe
Dislocation
Microscale defects
Nanoscale defects
Stacking fault

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2019.01.064

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title = "Detector performance and defect densities in CdZnTe after two-step annealing",

abstract = "Defects both microscale and nanoscale are play an important role in CdZnTe (CZT) device performance. Typical micro-scale defects such as Te inclusions were removed via a two-step annealing process, and their concentration was analyzed via IR transmission microscopy. In addition, transmission electron microscopy (TEM) measurement was employed to investigate the evolution of nano-scale defects after the annealing process. Dislocation and stacking faults were commonly observed defects in as-grown and annealed CZT. The line shape defects, which are possibly related to the stress field around dislocations, disappeared during the in-situ the annealing at 200–220 °C. A Frisch-grid CZT detector made via the two-step annealing process exhibited improved energy resolution and low backscattering counts in Cs-137 gamma spectra.",

keywords = "Annealing, CdZnTe, Dislocation, Microscale defects, Nanoscale defects, Stacking fault",

author = "Eunhye Kim and Yonghoon Kim and Bolotnikov, {A. E.} and James, {R. B.} and Kihyun Kim",

note = "Funding Information: This work was supported by a grant ( NRF-2018M2A2B3A01072384 ) of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (MSIP), Republic of Korea and by a grant ( K1605381 ) from Korea University . Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = apr,

day = "11",

doi = "10.1016/j.nima.2019.01.064",

language = "English",

volume = "923",

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T1 - Detector performance and defect densities in CdZnTe after two-step annealing

AU - Kim, Eunhye

AU - Kim, Yonghoon

AU - Bolotnikov, A. E.

AU - James, R. B.

AU - Kim, Kihyun

N1 - Funding Information: This work was supported by a grant ( NRF-2018M2A2B3A01072384 ) of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (MSIP), Republic of Korea and by a grant ( K1605381 ) from Korea University . Publisher Copyright: © 2019 Elsevier B.V.

PY - 2019/4/11

Y1 - 2019/4/11

N2 - Defects both microscale and nanoscale are play an important role in CdZnTe (CZT) device performance. Typical micro-scale defects such as Te inclusions were removed via a two-step annealing process, and their concentration was analyzed via IR transmission microscopy. In addition, transmission electron microscopy (TEM) measurement was employed to investigate the evolution of nano-scale defects after the annealing process. Dislocation and stacking faults were commonly observed defects in as-grown and annealed CZT. The line shape defects, which are possibly related to the stress field around dislocations, disappeared during the in-situ the annealing at 200–220 °C. A Frisch-grid CZT detector made via the two-step annealing process exhibited improved energy resolution and low backscattering counts in Cs-137 gamma spectra.

AB - Defects both microscale and nanoscale are play an important role in CdZnTe (CZT) device performance. Typical micro-scale defects such as Te inclusions were removed via a two-step annealing process, and their concentration was analyzed via IR transmission microscopy. In addition, transmission electron microscopy (TEM) measurement was employed to investigate the evolution of nano-scale defects after the annealing process. Dislocation and stacking faults were commonly observed defects in as-grown and annealed CZT. The line shape defects, which are possibly related to the stress field around dislocations, disappeared during the in-situ the annealing at 200–220 °C. A Frisch-grid CZT detector made via the two-step annealing process exhibited improved energy resolution and low backscattering counts in Cs-137 gamma spectra.

KW - Annealing

KW - CdZnTe

KW - Dislocation

KW - Microscale defects

KW - Nanoscale defects

KW - Stacking fault

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U2 - 10.1016/j.nima.2019.01.064

DO - 10.1016/j.nima.2019.01.064

M3 - Article

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SN - 0168-9002

VL - 923

SP - 51

EP - 54

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ER -

Detector performance and defect densities in CdZnTe after two-step annealing

Abstract

Keywords

ASJC Scopus subject areas

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