Detector performance and defect densities in CdZnTe after two-step annealing

Eunhye Kim, Yonghoon Kim, A. E. Bolotnikov, R. B. James, Kihyun Kim

    Research output: Contribution to journalArticlepeer-review

    17 Citations (Scopus)

    Abstract

    Defects both microscale and nanoscale are play an important role in CdZnTe (CZT) device performance. Typical micro-scale defects such as Te inclusions were removed via a two-step annealing process, and their concentration was analyzed via IR transmission microscopy. In addition, transmission electron microscopy (TEM) measurement was employed to investigate the evolution of nano-scale defects after the annealing process. Dislocation and stacking faults were commonly observed defects in as-grown and annealed CZT. The line shape defects, which are possibly related to the stress field around dislocations, disappeared during the in-situ the annealing at 200–220 °C. A Frisch-grid CZT detector made via the two-step annealing process exhibited improved energy resolution and low backscattering counts in Cs-137 gamma spectra.

    Original languageEnglish
    Pages (from-to)51-54
    Number of pages4
    JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
    Volume923
    DOIs
    Publication statusPublished - 2019 Apr 11

    Bibliographical note

    Publisher Copyright:
    © 2019 Elsevier B.V.

    Keywords

    • Annealing
    • CdZnTe
    • Dislocation
    • Microscale defects
    • Nanoscale defects
    • Stacking fault

    ASJC Scopus subject areas

    • Nuclear and High Energy Physics
    • Instrumentation

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