Detector performance and defect densities in CdZnTe after two-step annealing

Eunhye Kim; Yonghoon Kim; A. E. Bolotnikov; R. B. James; Kihyun Kim

doi:10.1016/j.nima.2019.01.064

Detector performance and defect densities in CdZnTe after two-step annealing

Eunhye Kim, Yonghoon Kim, A. E. Bolotnikov, R. B. James, Kihyun Kim^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Defects both microscale and nanoscale are play an important role in CdZnTe (CZT) device performance. Typical micro-scale defects such as Te inclusions were removed via a two-step annealing process, and their concentration was analyzed via IR transmission microscopy. In addition, transmission electron microscopy (TEM) measurement was employed to investigate the evolution of nano-scale defects after the annealing process. Dislocation and stacking faults were commonly observed defects in as-grown and annealed CZT. The line shape defects, which are possibly related to the stress field around dislocations, disappeared during the in-situ the annealing at 200–220 °C. A Frisch-grid CZT detector made via the two-step annealing process exhibited improved energy resolution and low backscattering counts in Cs-137 gamma spectra.

Original language	English
Pages (from-to)	51-54
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	923
DOIs	https://doi.org/10.1016/j.nima.2019.01.064
Publication status	Published - 2019 Apr 11

Bibliographical note

Publisher Copyright:
© 2019 Elsevier B.V.

Keywords

Annealing
CdZnTe
Dislocation
Microscale defects
Nanoscale defects
Stacking fault

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Access to Document

10.1016/j.nima.2019.01.064

Cite this

@article{9007e54fd4c344ed8211b2c551a23694,

title = "Detector performance and defect densities in CdZnTe after two-step annealing",

abstract = "Defects both microscale and nanoscale are play an important role in CdZnTe (CZT) device performance. Typical micro-scale defects such as Te inclusions were removed via a two-step annealing process, and their concentration was analyzed via IR transmission microscopy. In addition, transmission electron microscopy (TEM) measurement was employed to investigate the evolution of nano-scale defects after the annealing process. Dislocation and stacking faults were commonly observed defects in as-grown and annealed CZT. The line shape defects, which are possibly related to the stress field around dislocations, disappeared during the in-situ the annealing at 200–220 °C. A Frisch-grid CZT detector made via the two-step annealing process exhibited improved energy resolution and low backscattering counts in Cs-137 gamma spectra.",

keywords = "Annealing, CdZnTe, Dislocation, Microscale defects, Nanoscale defects, Stacking fault",

author = "Eunhye Kim and Yonghoon Kim and Bolotnikov, \{A. E.\} and James, \{R. B.\} and Kihyun Kim",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = apr,

day = "11",

doi = "10.1016/j.nima.2019.01.064",

language = "English",

volume = "923",

pages = "51--54",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Detector performance and defect densities in CdZnTe after two-step annealing

AU - Kim, Eunhye

AU - Kim, Yonghoon

AU - Bolotnikov, A. E.

AU - James, R. B.

AU - Kim, Kihyun

PY - 2019/4/11

Y1 - 2019/4/11

N2 - Defects both microscale and nanoscale are play an important role in CdZnTe (CZT) device performance. Typical micro-scale defects such as Te inclusions were removed via a two-step annealing process, and their concentration was analyzed via IR transmission microscopy. In addition, transmission electron microscopy (TEM) measurement was employed to investigate the evolution of nano-scale defects after the annealing process. Dislocation and stacking faults were commonly observed defects in as-grown and annealed CZT. The line shape defects, which are possibly related to the stress field around dislocations, disappeared during the in-situ the annealing at 200–220 °C. A Frisch-grid CZT detector made via the two-step annealing process exhibited improved energy resolution and low backscattering counts in Cs-137 gamma spectra.

AB - Defects both microscale and nanoscale are play an important role in CdZnTe (CZT) device performance. Typical micro-scale defects such as Te inclusions were removed via a two-step annealing process, and their concentration was analyzed via IR transmission microscopy. In addition, transmission electron microscopy (TEM) measurement was employed to investigate the evolution of nano-scale defects after the annealing process. Dislocation and stacking faults were commonly observed defects in as-grown and annealed CZT. The line shape defects, which are possibly related to the stress field around dislocations, disappeared during the in-situ the annealing at 200–220 °C. A Frisch-grid CZT detector made via the two-step annealing process exhibited improved energy resolution and low backscattering counts in Cs-137 gamma spectra.

KW - Annealing

KW - CdZnTe

KW - Dislocation

KW - Microscale defects

KW - Nanoscale defects

KW - Stacking fault

UR - https://www.scopus.com/pages/publications/85060710764

U2 - 10.1016/j.nima.2019.01.064

DO - 10.1016/j.nima.2019.01.064

M3 - Article

AN - SCOPUS:85060710764

SN - 0168-9002

VL - 923

SP - 51

EP - 54

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ER -

Detector performance and defect densities in CdZnTe after two-step annealing

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this