Determination of interlayer exchange fields acting on individual (Ga,Mn)As layers in (Ga,Mn)As/GaAs multilayers

Sunjae Chung; Sangyeop Lee; Taehee Yoo; Hakjoon Lee; Sanghoon Lee; Xinyu Liu; Jacek Furdyna

doi:10.7567/JJAP.54.033001

Determination of interlayer exchange fields acting on individual (Ga,Mn)As layers in (Ga,Mn)As/GaAs multilayers

Sunjae Chung, Sangyeop Lee, Taehee Yoo, Hakjoon Lee, Sanghoon Lee, Xinyu Liu, Jacek Furdyna

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Magnetoresistance in antiferromagnetically coupled GaMnAs/GaAs:Be multilayers exhibits a unique step feature caused by sequential flips of magnetization in individual GaMnAs layers. Hysteresis loops corresponding to such magnetization flips in specific layers were measured by adjusting the range of the field scan to where the flip occurs. Using the hysteresis shifts of such partial loops, we were able to obtain the strength of the interlayer exchange coupling exerted on a given GaMnAs layer by the rest of the multilayers. This also allowed us to quantitatively establish the magnitude of the coupling of each GaMnAs layer with its adjacent neighbors.

Original language	English
Article number	033001
Journal	Japanese journal of applied physics
Volume	54
Issue number	3
DOIs	https://doi.org/10.7567/JJAP.54.033001
Publication status	Published - 2015 Mar 1

Bibliographical note

Publisher Copyright:
© 2015 The Japan Society of Applied Physics.

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.7567/JJAP.54.033001

Cite this

@article{3bb6960639c64e65b73f0b02eb517120,

title = "Determination of interlayer exchange fields acting on individual (Ga,Mn)As layers in (Ga,Mn)As/GaAs multilayers",

abstract = "Magnetoresistance in antiferromagnetically coupled GaMnAs/GaAs:Be multilayers exhibits a unique step feature caused by sequential flips of magnetization in individual GaMnAs layers. Hysteresis loops corresponding to such magnetization flips in specific layers were measured by adjusting the range of the field scan to where the flip occurs. Using the hysteresis shifts of such partial loops, we were able to obtain the strength of the interlayer exchange coupling exerted on a given GaMnAs layer by the rest of the multilayers. This also allowed us to quantitatively establish the magnitude of the coupling of each GaMnAs layer with its adjacent neighbors.",

author = "Sunjae Chung and Sangyeop Lee and Taehee Yoo and Hakjoon Lee and Sanghoon Lee and Xinyu Liu and Jacek Furdyna",

note = "Publisher Copyright: {\textcopyright} 2015 The Japan Society of Applied Physics.",

year = "2015",

month = mar,

day = "1",

doi = "10.7567/JJAP.54.033001",

language = "English",

volume = "54",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3",

}

TY - JOUR

T1 - Determination of interlayer exchange fields acting on individual (Ga,Mn)As layers in (Ga,Mn)As/GaAs multilayers

AU - Chung, Sunjae

AU - Lee, Sangyeop

AU - Yoo, Taehee

AU - Lee, Hakjoon

AU - Lee, Sanghoon

AU - Liu, Xinyu

AU - Furdyna, Jacek

PY - 2015/3/1

Y1 - 2015/3/1

N2 - Magnetoresistance in antiferromagnetically coupled GaMnAs/GaAs:Be multilayers exhibits a unique step feature caused by sequential flips of magnetization in individual GaMnAs layers. Hysteresis loops corresponding to such magnetization flips in specific layers were measured by adjusting the range of the field scan to where the flip occurs. Using the hysteresis shifts of such partial loops, we were able to obtain the strength of the interlayer exchange coupling exerted on a given GaMnAs layer by the rest of the multilayers. This also allowed us to quantitatively establish the magnitude of the coupling of each GaMnAs layer with its adjacent neighbors.

AB - Magnetoresistance in antiferromagnetically coupled GaMnAs/GaAs:Be multilayers exhibits a unique step feature caused by sequential flips of magnetization in individual GaMnAs layers. Hysteresis loops corresponding to such magnetization flips in specific layers were measured by adjusting the range of the field scan to where the flip occurs. Using the hysteresis shifts of such partial loops, we were able to obtain the strength of the interlayer exchange coupling exerted on a given GaMnAs layer by the rest of the multilayers. This also allowed us to quantitatively establish the magnitude of the coupling of each GaMnAs layer with its adjacent neighbors.

UR - http://www.scopus.com/inward/record.url?scp=84924280799&partnerID=8YFLogxK

U2 - 10.7567/JJAP.54.033001

DO - 10.7567/JJAP.54.033001

M3 - Article

AN - SCOPUS:84924280799

SN - 0021-4922

VL - 54

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 3

M1 - 033001

ER -

Determination of interlayer exchange fields acting on individual (Ga,Mn)As layers in (Ga,Mn)As/GaAs multilayers

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this