Determination of localized states in nanocrystalline CdZnTe by using a transient photocurrent analysis

K. H. Kim; K. N. Oh; S. U. Kim

Determination of localized states in nanocrystalline CdZnTe by using a transient photocurrent analysis

K. H. Kim, K. N. Oh, S. U. Kim

Research output: Contribution to journal › Article › peer-review

Abstract

Using the thermal evaporation method, we prepared nanocrystalline CdZnTe thick films having crystallite sizes of 30-40 nm. Deposited nano-CdZnTe thick films have a preferred (111) growth direction and a resistivity of 1 × 10¹⁰ Ω cm. Using the multiple trapping model, we examined the localized state distributions from the time-of-flight (TOE) transient current. In the case of nano-CdZnTe, a localized state having 1 × 10¹⁵ cm^-3eV^-1 at 0.41 eV above the valence band is present and is attributed to Cd vacancies. Another localized state is present at 0.7 eV above the valence band.

Original language	English
Pages (from-to)	471-474
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	41
Issue number	4
Publication status	Published - 2002 Oct

Keywords

CdZnTe
Deep level trap laplace transform
Density of states
X-ray detector

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

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title = "Determination of localized states in nanocrystalline CdZnTe by using a transient photocurrent analysis",

abstract = "Using the thermal evaporation method, we prepared nanocrystalline CdZnTe thick films having crystallite sizes of 30-40 nm. Deposited nano-CdZnTe thick films have a preferred (111) growth direction and a resistivity of 1 × 1010 Ω cm. Using the multiple trapping model, we examined the localized state distributions from the time-of-flight (TOE) transient current. In the case of nano-CdZnTe, a localized state having 1 × 1015 cm-3eV-1 at 0.41 eV above the valence band is present and is attributed to Cd vacancies. Another localized state is present at 0.7 eV above the valence band.",

keywords = "CdZnTe, Deep level trap laplace transform, Density of states, X-ray detector",

author = "Kim, {K. H.} and Oh, {K. N.} and Kim, {S. U.}",

year = "2002",

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language = "English",

volume = "41",

pages = "471--474",

journal = "Journal of the Korean Physical Society",

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T1 - Determination of localized states in nanocrystalline CdZnTe by using a transient photocurrent analysis

AU - Kim, K. H.

AU - Oh, K. N.

AU - Kim, S. U.

PY - 2002/10

Y1 - 2002/10

N2 - Using the thermal evaporation method, we prepared nanocrystalline CdZnTe thick films having crystallite sizes of 30-40 nm. Deposited nano-CdZnTe thick films have a preferred (111) growth direction and a resistivity of 1 × 1010 Ω cm. Using the multiple trapping model, we examined the localized state distributions from the time-of-flight (TOE) transient current. In the case of nano-CdZnTe, a localized state having 1 × 1015 cm-3eV-1 at 0.41 eV above the valence band is present and is attributed to Cd vacancies. Another localized state is present at 0.7 eV above the valence band.

AB - Using the thermal evaporation method, we prepared nanocrystalline CdZnTe thick films having crystallite sizes of 30-40 nm. Deposited nano-CdZnTe thick films have a preferred (111) growth direction and a resistivity of 1 × 1010 Ω cm. Using the multiple trapping model, we examined the localized state distributions from the time-of-flight (TOE) transient current. In the case of nano-CdZnTe, a localized state having 1 × 1015 cm-3eV-1 at 0.41 eV above the valence band is present and is attributed to Cd vacancies. Another localized state is present at 0.7 eV above the valence band.

KW - CdZnTe

KW - Deep level trap laplace transform

KW - Density of states

KW - X-ray detector

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AN - SCOPUS:0035981426

SN - 0374-4884

VL - 41

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JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 4

ER -

Determination of localized states in nanocrystalline CdZnTe by using a transient photocurrent analysis

Abstract

Keywords

ASJC Scopus subject areas

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