Development and electrical properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O3 thin film applied to embedded decoupling capacitors

Seung Hwan Lee; Hong Ki Kim; Min Gyu Kang; Chong Yun Kang; Sung Gap Lee; Young Hie Lee; Jung Rag Yoon

doi:10.1109/LED.2014.2320295

Development and electrical properties of (Ca_0.7Sr_0.3) (Zr_0.8Ti_0.2)O₃ thin film applied to embedded decoupling capacitors

Seung Hwan Lee, Hong Ki Kim, Min Gyu Kang, Chong Yun Kang, Sung Gap Lee, Young Hie Lee, Jung Rag Yoon

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A formed device embedded-type 0402 sized (Ca_0.7Sr _0.3)(Zr_0.8Ti_0.2)O₃ (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (-55 °C-125 °C, delta C/C = ±30 ppm/°C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 ω and 62.39 μH, respectively. The leakage current density was 0.78 μA/cm² at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor.

Original language	English
Article number	6814281
Pages (from-to)	777-779
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	7
DOIs	https://doi.org/10.1109/LED.2014.2320295
Publication status	Published - 2014 Jul

Keywords

CSZT
FDE
embedded capacitor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2014.2320295

Cite this

@article{35531a82a149432f8481ddfcd830958c,

title = "Development and electrical properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O3 thin film applied to embedded decoupling capacitors",

abstract = "A formed device embedded-type 0402 sized (Ca0.7Sr 0.3)(Zr0.8Ti0.2)O3 (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (-55 °C-125 °C, delta C/C = ±30 ppm/°C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 ω and 62.39 μH, respectively. The leakage current density was 0.78 μA/cm2 at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor.",

keywords = "CSZT, FDE, embedded capacitor",

author = "Lee, {Seung Hwan} and Kim, {Hong Ki} and Kang, {Min Gyu} and Kang, {Chong Yun} and Lee, {Sung Gap} and Lee, {Young Hie} and Yoon, {Jung Rag}",

year = "2014",

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doi = "10.1109/LED.2014.2320295",

language = "English",

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pages = "777--779",

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AU - Lee, Seung Hwan

AU - Kim, Hong Ki

AU - Kang, Min Gyu

AU - Kang, Chong Yun

AU - Lee, Sung Gap

AU - Lee, Young Hie

AU - Yoon, Jung Rag

PY - 2014/7

Y1 - 2014/7

N2 - A formed device embedded-type 0402 sized (Ca0.7Sr 0.3)(Zr0.8Ti0.2)O3 (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (-55 °C-125 °C, delta C/C = ±30 ppm/°C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 ω and 62.39 μH, respectively. The leakage current density was 0.78 μA/cm2 at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor.

AB - A formed device embedded-type 0402 sized (Ca0.7Sr 0.3)(Zr0.8Ti0.2)O3 (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (-55 °C-125 °C, delta C/C = ±30 ppm/°C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 ω and 62.39 μH, respectively. The leakage current density was 0.78 μA/cm2 at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor.

KW - CSZT

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KW - embedded capacitor

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