Abstract
In this paper, complementary thin-film transistor (TFT) inverter is fabricated with organic-inorganic hybrid channels. By adopting p-channel pentacene and n-channel ZnO, we have fabricated a device of hybrid complementary TFT inverter by using same electrode in organic-inorganic hybrid channels. To be accomplished Ohmic-contact in organic-inorganic hybrid channels, we adapted to n-channel staggered TFT and p-channel coplanar TFT. In results, a hybrid inverter built through integration of organic and inorganic TFT shows that the typical inverter response to stage switching is clearly observed between 0 and 40 V, for both input directions, displaying a high voltage gain - (dV OUT/dVIN) > 16.
Original language | English |
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Pages (from-to) | 6264-6267 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 518 |
Issue number | 22 |
DOIs | |
Publication status | Published - 2010 Sept 1 |
Keywords
- Hybrid
- Inverter
- Pentacene
- Thin film transistor
- ZnO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry