Development of polycide application and control of process conditions on DCS based WSix

Young Kyou Park; Jaihyung Won; Ju Hwan Park; Jung Ho Park

doi:10.1557/proc-670-k3.6

Development of polycide application and control of process conditions on DCS based WSi_x

Young Kyou Park, Jaihyung Won, Ju Hwan Park, Jung Ho Park

School of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Dichlorosilane based CVD WSi_x is deposited by the reaction of tungsten fluoride (WF₆) and dichlorosilane (SiH₂Cl₂; DCS). The reaction is thermodynamically favorable and results in WSi_x film with less fluorine (F) concentration than monosilane (SiH₄; MS) based WSi_x. DCS based WSi_x shows less expansion of gate oxide and better step coverage than monosilane based WSi_x. Due to its DCS based stable film stoichiometry, WSi_x has low resistivity and therefore has been widely applied in ULSI memory devices. However, DCS is a source of chlorine, which is a major impurity. This means special considerations have to be made when using DCS based WSi_x in comparison with MS based WSi_x. This work provides evaluation and control of chlorine behaviors in DCS based WSi_x film.

Original language	English
Pages (from-to)	K361-K366
Journal	Materials Research Society Symposium - Proceedings
Volume	670
DOIs	https://doi.org/10.1557/proc-670-k3.6
Publication status	Published - 2001
Event	Gate Stack and Silicide Issues in Silicon Processing II - San Francisco, CA, United States Duration: 2001 Apr 17 → 2001 Apr 19

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-670-k3.6

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title = "Development of polycide application and control of process conditions on DCS based WSix",

abstract = "Dichlorosilane based CVD WSix is deposited by the reaction of tungsten fluoride (WF6) and dichlorosilane (SiH2Cl2; DCS). The reaction is thermodynamically favorable and results in WSix film with less fluorine (F) concentration than monosilane (SiH4; MS) based WSix. DCS based WSix shows less expansion of gate oxide and better step coverage than monosilane based WSix. Due to its DCS based stable film stoichiometry, WSix has low resistivity and therefore has been widely applied in ULSI memory devices. However, DCS is a source of chlorine, which is a major impurity. This means special considerations have to be made when using DCS based WSix in comparison with MS based WSix. This work provides evaluation and control of chlorine behaviors in DCS based WSix film.",

author = "Park, {Young Kyou} and Jaihyung Won and Park, {Ju Hwan} and Park, {Jung Ho}",

year = "2001",

doi = "10.1557/proc-670-k3.6",

language = "English",

volume = "670",

pages = "K361--K366",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Gate Stack and Silicide Issues in Silicon Processing II ; Conference date: 17-04-2001 Through 19-04-2001",

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TY - JOUR

T1 - Development of polycide application and control of process conditions on DCS based WSix

AU - Park, Young Kyou

AU - Won, Jaihyung

AU - Park, Ju Hwan

AU - Park, Jung Ho

PY - 2001

Y1 - 2001

N2 - Dichlorosilane based CVD WSix is deposited by the reaction of tungsten fluoride (WF6) and dichlorosilane (SiH2Cl2; DCS). The reaction is thermodynamically favorable and results in WSix film with less fluorine (F) concentration than monosilane (SiH4; MS) based WSix. DCS based WSix shows less expansion of gate oxide and better step coverage than monosilane based WSix. Due to its DCS based stable film stoichiometry, WSix has low resistivity and therefore has been widely applied in ULSI memory devices. However, DCS is a source of chlorine, which is a major impurity. This means special considerations have to be made when using DCS based WSix in comparison with MS based WSix. This work provides evaluation and control of chlorine behaviors in DCS based WSix film.

AB - Dichlorosilane based CVD WSix is deposited by the reaction of tungsten fluoride (WF6) and dichlorosilane (SiH2Cl2; DCS). The reaction is thermodynamically favorable and results in WSix film with less fluorine (F) concentration than monosilane (SiH4; MS) based WSix. DCS based WSix shows less expansion of gate oxide and better step coverage than monosilane based WSix. Due to its DCS based stable film stoichiometry, WSix has low resistivity and therefore has been widely applied in ULSI memory devices. However, DCS is a source of chlorine, which is a major impurity. This means special considerations have to be made when using DCS based WSix in comparison with MS based WSix. This work provides evaluation and control of chlorine behaviors in DCS based WSix film.

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DO - 10.1557/proc-670-k3.6

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SP - K361-K366

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Gate Stack and Silicide Issues in Silicon Processing II

Y2 - 17 April 2001 through 19 April 2001

ER -

Development of polycide application and control of process conditions on DCS based WSi_x

Abstract

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