Development of solar-blind photodetectors based on Si-implanted β-Ga2O3

Sooyeoun Oh, Younghun Jung, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

104 Citations (Scopus)

Abstract

β-Ga2O3 films grown on Al2O3 by a metalorganic chemical vapor deposition technique were used to fabricate a solar-blind photodetector with a planar photoconductor structure. The crystal structure and quality of the β-Ga2O3 films were analyzed using X-ray diffraction and micro-Raman spectroscopy. Si ions were introduced into the β-Ga2O3 thin films by ion implantation method and activated by an annealing process to form an Ohmic contact between the Ti/Au electrode and the β-Ga2O3 film. The electrical conductivity of the β-Ga2O3 films was greatly improved by the implantation and subsequent activation of the Si ions. The photoresponse properties of the photodetectors were investigated by analyzing the current-voltage characteristics and the time-dependent photoresponse curves. The fabricated solar-blind photodetectors exhibited photoresponse to 254 nm wavelength, and blindness to 365 nm light, with a high spectral selectivity.

Original languageEnglish
Pages (from-to)28300-28305
Number of pages6
JournalOptics Express
Volume23
Issue number22
DOIs
Publication statusPublished - 2015 Nov 2

Bibliographical note

Funding Information:
The research at Korea University was supported by the New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry & Energy (No. 20153030012110). Research at the U.S. Naval Research Laboratory was supported by the Office of Naval Research.

Publisher Copyright:
©2015 Optical Society of America.

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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