TY - JOUR
T1 - Device design of single-gated feedback field-effect transistors to achieve latch-up behaviors with high current gains
AU - Woo, Sola
AU - Kim, Sangsig
N1 - Funding Information:
This work was partly supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (NRF-2016R1E1A1A02920171), the Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program. (10067791, “Development of fabrication and device structure of feedback Si channel 1T-SRAM for artificial intelligence”) and the Brain Korea 21 Plus Project in 2020.
Funding Information:
This work was partly supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) ( NRF-2016R1E1A1A02920171 ), the Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program . ( 10067791 , “Development of fabrication and device structure of feedback Si channel 1T-SRAM for artificial intelligence”) and the Brain Korea 21 Plus Project in 2020.
Publisher Copyright:
© 2020 Korean Physical Society
PY - 2020/10
Y1 - 2020/10
N2 - In this study, a device design of single-gated feedback field-effect transistors (FBFETs) is proposed to achieve latch-up behaviors with high current gains. The latch-up mechanism is examined by conducting an equivalent circuit analysis, and the band diagram, I–V characteristics, memory window, subthreshold swing, and on/off current ratio are investigated using a commercial device simulator. The proposed FBFETs exhibit memory windows wider than 3.0 V, subthreshold swings less than 0.1 mV/decade, the on/off current ratios of approximately 1010, and on-currents of approximately 10−5 A at room temperature. The superior device characteristics and controllable memory windows open the promising possibility of FBFETs as the next-generation electronic devices.
AB - In this study, a device design of single-gated feedback field-effect transistors (FBFETs) is proposed to achieve latch-up behaviors with high current gains. The latch-up mechanism is examined by conducting an equivalent circuit analysis, and the band diagram, I–V characteristics, memory window, subthreshold swing, and on/off current ratio are investigated using a commercial device simulator. The proposed FBFETs exhibit memory windows wider than 3.0 V, subthreshold swings less than 0.1 mV/decade, the on/off current ratios of approximately 1010, and on-currents of approximately 10−5 A at room temperature. The superior device characteristics and controllable memory windows open the promising possibility of FBFETs as the next-generation electronic devices.
KW - Design method
KW - Feedback field-effect transistors
KW - Latch-up mechanism
KW - Memory characteristics
KW - TCAD simulation
UR - http://www.scopus.com/inward/record.url?scp=85089668310&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2020.07.020
DO - 10.1016/j.cap.2020.07.020
M3 - Article
AN - SCOPUS:85089668310
SN - 1567-1739
VL - 20
SP - 1156
EP - 1162
JO - Current Applied Physics
JF - Current Applied Physics
IS - 10
ER -