Device design of single-gated feedback field-effect transistors to achieve latch-up behaviors with high current gains

Sola Woo; Sangsig Kim

doi:10.1016/j.cap.2020.07.020

Device design of single-gated feedback field-effect transistors to achieve latch-up behaviors with high current gains

Sola Woo
, Sangsig Kim^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

In this study, a device design of single-gated feedback field-effect transistors (FBFETs) is proposed to achieve latch-up behaviors with high current gains. The latch-up mechanism is examined by conducting an equivalent circuit analysis, and the band diagram, I–V characteristics, memory window, subthreshold swing, and on/off current ratio are investigated using a commercial device simulator. The proposed FBFETs exhibit memory windows wider than 3.0 V, subthreshold swings less than 0.1 mV/decade, the on/off current ratios of approximately 10¹⁰, and on-currents of approximately 10⁻⁵ A at room temperature. The superior device characteristics and controllable memory windows open the promising possibility of FBFETs as the next-generation electronic devices.

Original language	English
Pages (from-to)	1156-1162
Number of pages	7
Journal	Current Applied Physics
Volume	20
Issue number	10
DOIs	https://doi.org/10.1016/j.cap.2020.07.020
Publication status	Published - 2020 Oct

Bibliographical note

Publisher Copyright:
© 2020 Korean Physical Society

Keywords

Design method
Feedback field-effect transistors
Latch-up mechanism
Memory characteristics
TCAD simulation

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

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10.1016/j.cap.2020.07.020

Cite this

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title = "Device design of single-gated feedback field-effect transistors to achieve latch-up behaviors with high current gains",

abstract = "In this study, a device design of single-gated feedback field-effect transistors (FBFETs) is proposed to achieve latch-up behaviors with high current gains. The latch-up mechanism is examined by conducting an equivalent circuit analysis, and the band diagram, I–V characteristics, memory window, subthreshold swing, and on/off current ratio are investigated using a commercial device simulator. The proposed FBFETs exhibit memory windows wider than 3.0 V, subthreshold swings less than 0.1 mV/decade, the on/off current ratios of approximately 1010, and on-currents of approximately 10−5 A at room temperature. The superior device characteristics and controllable memory windows open the promising possibility of FBFETs as the next-generation electronic devices.",

keywords = "Design method, Feedback field-effect transistors, Latch-up mechanism, Memory characteristics, TCAD simulation",

author = "Sola Woo and Sangsig Kim",

note = "Publisher Copyright: {\textcopyright} 2020 Korean Physical Society",

year = "2020",

month = oct,

doi = "10.1016/j.cap.2020.07.020",

language = "English",

volume = "20",

pages = "1156--1162",

journal = "Current Applied Physics",

issn = "1567-1739",

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T1 - Device design of single-gated feedback field-effect transistors to achieve latch-up behaviors with high current gains

AU - Woo, Sola

AU - Kim, Sangsig

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N2 - In this study, a device design of single-gated feedback field-effect transistors (FBFETs) is proposed to achieve latch-up behaviors with high current gains. The latch-up mechanism is examined by conducting an equivalent circuit analysis, and the band diagram, I–V characteristics, memory window, subthreshold swing, and on/off current ratio are investigated using a commercial device simulator. The proposed FBFETs exhibit memory windows wider than 3.0 V, subthreshold swings less than 0.1 mV/decade, the on/off current ratios of approximately 1010, and on-currents of approximately 10−5 A at room temperature. The superior device characteristics and controllable memory windows open the promising possibility of FBFETs as the next-generation electronic devices.

AB - In this study, a device design of single-gated feedback field-effect transistors (FBFETs) is proposed to achieve latch-up behaviors with high current gains. The latch-up mechanism is examined by conducting an equivalent circuit analysis, and the band diagram, I–V characteristics, memory window, subthreshold swing, and on/off current ratio are investigated using a commercial device simulator. The proposed FBFETs exhibit memory windows wider than 3.0 V, subthreshold swings less than 0.1 mV/decade, the on/off current ratios of approximately 1010, and on-currents of approximately 10−5 A at room temperature. The superior device characteristics and controllable memory windows open the promising possibility of FBFETs as the next-generation electronic devices.

KW - Design method

KW - Feedback field-effect transistors

KW - Latch-up mechanism

KW - Memory characteristics

KW - TCAD simulation

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DO - 10.1016/j.cap.2020.07.020

M3 - Article

AN - SCOPUS:85089668310

SN - 1567-1739

VL - 20

SP - 1156

EP - 1162

JO - Current Applied Physics

JF - Current Applied Physics

IS - 10

ER -

Device design of single-gated feedback field-effect transistors to achieve latch-up behaviors with high current gains

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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