Device performance of nonpolar a-plane (11-20) InGaN/GaN Light-emitting diodes on r-plane sapphire substrates

Kwang Hyeon Baik; Jae Hyoun Park; Sung Ho Lee; Hooyoung Song; Sung Min Hwang; Seogwoo Lee; Junggeun Jhin; Jeong Tak; Jihyun Kim

doi:10.3938/jkps.56.1140

Device performance of nonpolar a-plane (11-20) InGaN/GaN Light-emitting diodes on r-plane sapphire substrates

Kwang Hyeon Baik, Jae Hyoun Park, Sung Ho Lee, Hooyoung Song, Sung Min Hwang, Seogwoo Lee, Junggeun Jhin, Jeong Tak, Jihyun Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Nonpolar a-plane (11-20) InGaN/GaN light-emitting diodes were successfully demonstrated on rplane (1-102) sapphire substrates. High-crystalline-quality a-plane (11-20) GaN films with smooth morphologies were obtained by using metalorganic chemical vapor deposition (MOCVD) with a multi-step growth method. No apparent blueshift in the peak emission wavelength was observed over a 150 mA current range from on-wafer measurements, indicating that there is no strong polarizationinduced electric field in the a-plane GaN LEDs. The optical output power and the external quantum efficiency were measured as 1.3 mW and 2.55%, respectively, at a driving current of 20 mA when packaged with resin epoxy molding.

Original language	English
Pages (from-to)	1140-1143
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	56
Issue number	4
DOIs	https://doi.org/10.3938/jkps.56.1140
Publication status	Published - 2010 Apr 15

Keywords

A-plane gan
Electroluminescence
MOCVD
Stacking faults

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.3938/jkps.56.1140

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title = "Device performance of nonpolar a-plane (11-20) InGaN/GaN Light-emitting diodes on r-plane sapphire substrates",

abstract = "Nonpolar a-plane (11-20) InGaN/GaN light-emitting diodes were successfully demonstrated on rplane (1-102) sapphire substrates. High-crystalline-quality a-plane (11-20) GaN films with smooth morphologies were obtained by using metalorganic chemical vapor deposition (MOCVD) with a multi-step growth method. No apparent blueshift in the peak emission wavelength was observed over a 150 mA current range from on-wafer measurements, indicating that there is no strong polarizationinduced electric field in the a-plane GaN LEDs. The optical output power and the external quantum efficiency were measured as 1.3 mW and 2.55%, respectively, at a driving current of 20 mA when packaged with resin epoxy molding.",

keywords = "A-plane gan, Electroluminescence, MOCVD, Stacking faults",

author = "Baik, {Kwang Hyeon} and Park, {Jae Hyoun} and Lee, {Sung Ho} and Hooyoung Song and Hwang, {Sung Min} and Seogwoo Lee and Junggeun Jhin and Jeong Tak and Jihyun Kim",

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doi = "10.3938/jkps.56.1140",

language = "English",

volume = "56",

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journal = "Journal of the Korean Physical Society",

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T1 - Device performance of nonpolar a-plane (11-20) InGaN/GaN Light-emitting diodes on r-plane sapphire substrates

AU - Baik, Kwang Hyeon

AU - Park, Jae Hyoun

AU - Lee, Sung Ho

AU - Song, Hooyoung

AU - Hwang, Sung Min

AU - Lee, Seogwoo

AU - Jhin, Junggeun

AU - Tak, Jeong

AU - Kim, Jihyun

PY - 2010/4/15

Y1 - 2010/4/15

N2 - Nonpolar a-plane (11-20) InGaN/GaN light-emitting diodes were successfully demonstrated on rplane (1-102) sapphire substrates. High-crystalline-quality a-plane (11-20) GaN films with smooth morphologies were obtained by using metalorganic chemical vapor deposition (MOCVD) with a multi-step growth method. No apparent blueshift in the peak emission wavelength was observed over a 150 mA current range from on-wafer measurements, indicating that there is no strong polarizationinduced electric field in the a-plane GaN LEDs. The optical output power and the external quantum efficiency were measured as 1.3 mW and 2.55%, respectively, at a driving current of 20 mA when packaged with resin epoxy molding.

AB - Nonpolar a-plane (11-20) InGaN/GaN light-emitting diodes were successfully demonstrated on rplane (1-102) sapphire substrates. High-crystalline-quality a-plane (11-20) GaN films with smooth morphologies were obtained by using metalorganic chemical vapor deposition (MOCVD) with a multi-step growth method. No apparent blueshift in the peak emission wavelength was observed over a 150 mA current range from on-wafer measurements, indicating that there is no strong polarizationinduced electric field in the a-plane GaN LEDs. The optical output power and the external quantum efficiency were measured as 1.3 mW and 2.55%, respectively, at a driving current of 20 mA when packaged with resin epoxy molding.

KW - A-plane gan

KW - Electroluminescence

KW - MOCVD

KW - Stacking faults

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U2 - 10.3938/jkps.56.1140

DO - 10.3938/jkps.56.1140

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VL - 56

SP - 1140

EP - 1143

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 4

ER -

Device performance of nonpolar a-plane (11-20) InGaN/GaN Light-emitting diodes on r-plane sapphire substrates

Abstract

Keywords

ASJC Scopus subject areas

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