Dielectric properties and schottky barriers in silver tantalate-niobate thin film capacitors

Jung Hyuk Koh, Byung Moo Moon, Alex Grishin

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


Submicron thick ferroelectric Ag(Ta,Nb)O3 films have been pulsed laser deposited on the bulk Pt80lr20 polycrystalline substrates. They are ferroelectric at temperatures below 125 K with the remnant polarization of 0.4 C/cm2 @ 77K and paraelectric at higher temperatures with tan@ 100 kHz as low as 0.015. Extensive I-V characterization has been performed in a wide temperature range 77 K to 350 K for vertical Me/Ag(Ta,Nb)O3/Pt80Ir20 capacitive cells, where the metals Me = Pd, Au, Cr, and Al have been used as a top electrode. The electronic transport in thin Me/Ag(Ta,Nb)O3/Pt80Ir20 capacitors follows the Schottky emission mechanism with the barrier height for the Pd, Au, Cr, and Al of 0.85, 0.8, 0.74, and 0.69 eV, respectively.

Original languageEnglish
Pages (from-to)411-418
Number of pages8
JournalIntegrated Ferroelectrics
Issue number1-4
Publication statusPublished - 2001
Event13th International Symposium on Integrated Ferroelectrics - Colorado Springs, CO, United States
Duration: 2006 Mar 112006 Mar 14

Bibliographical note

Funding Information:
We acknowledge support from the Swedish Foundation for Strategic Research (SSF) and agency NUTEK. We thank Dr. S.I. Khartsev for his assistance in temperature measurements of transport properties.


  • Ag(Ta,Nb)O films
  • Barrier height
  • Loss tangent
  • Schottky emission
  • Work function

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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