Dielectric properties and schottky barriers in silver tantalate-niobate thin film capacitors

Jung Hyuk Koh, Byung Moo Moon, Alex Grishin

    Research output: Contribution to journalConference articlepeer-review

    4 Citations (Scopus)

    Abstract

    Submicron thick ferroelectric Ag(Ta,Nb)O3 films have been pulsed laser deposited on the bulk Pt80lr20 polycrystalline substrates. They are ferroelectric at temperatures below 125 K with the remnant polarization of 0.4 C/cm2 @ 77K and paraelectric at higher temperatures with tan@ 100 kHz as low as 0.015. Extensive I-V characterization has been performed in a wide temperature range 77 K to 350 K for vertical Me/Ag(Ta,Nb)O3/Pt80Ir20 capacitive cells, where the metals Me = Pd, Au, Cr, and Al have been used as a top electrode. The electronic transport in thin Me/Ag(Ta,Nb)O3/Pt80Ir20 capacitors follows the Schottky emission mechanism with the barrier height for the Pd, Au, Cr, and Al of 0.85, 0.8, 0.74, and 0.69 eV, respectively.

    Original languageEnglish
    Pages (from-to)411-418
    Number of pages8
    JournalIntegrated Ferroelectrics
    Volume39
    Issue number1-4
    DOIs
    Publication statusPublished - 2001
    Event13th International Symposium on Integrated Ferroelectrics - Colorado Springs, CO, United States
    Duration: 2006 Mar 112006 Mar 14

    Bibliographical note

    Funding Information:
    We acknowledge support from the Swedish Foundation for Strategic Research (SSF) and agency NUTEK. We thank Dr. S.I. Khartsev for his assistance in temperature measurements of transport properties.

    Keywords

    • Ag(Ta,Nb)O films
    • Barrier height
    • Loss tangent
    • Schottky emission
    • Work function

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Control and Systems Engineering
    • Ceramics and Composites
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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