Abstract
Submicron thick ferroelectric Ag(Ta,Nb)O3 films have been pulsed laser deposited on the bulk Pt80lr20 polycrystalline substrates. They are ferroelectric at temperatures below 125 K with the remnant polarization of 0.4 C/cm2 @ 77K and paraelectric at higher temperatures with tan@ 100 kHz as low as 0.015. Extensive I-V characterization has been performed in a wide temperature range 77 K to 350 K for vertical Me/Ag(Ta,Nb)O3/Pt80Ir20 capacitive cells, where the metals Me = Pd, Au, Cr, and Al have been used as a top electrode. The electronic transport in thin Me/Ag(Ta,Nb)O3/Pt80Ir20 capacitors follows the Schottky emission mechanism with the barrier height for the Pd, Au, Cr, and Al of 0.85, 0.8, 0.74, and 0.69 eV, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 411-418 |
| Number of pages | 8 |
| Journal | Integrated Ferroelectrics |
| Volume | 39 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 2001 |
| Event | 13th International Symposium on Integrated Ferroelectrics - Colorado Springs, CO, United States Duration: 2006 Mar 11 → 2006 Mar 14 |
Keywords
- Ag(Ta,Nb)O films
- Barrier height
- Loss tangent
- Schottky emission
- Work function
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry