Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx:O Bilayer Structure

Tae Ho Lee, Ju Hyun Park, Tae Geun Kim

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)

    Abstract

    In this letter, we propose a gallium oxide/oxygen doped silicon nitride-based resistive switching device for removing sneak-path currents in high-density crossbar array structures. The device exhibited diodelike characteristics owing to a simple Schottky contact and ultralow power operating behavior (∼ 0.5 V, 1 μA) without any forming process. Both ON/OFF and rectification ratios exceeded 103, and the fastest ac-pulse program (erase) time was 50 (80) ns. The ac-pulse program and erase tests showed 105 cycle endurance without degradation, and dc test showed over 102 cycle endurance. Furthermore, data retention time was > 105 s at room temperature.

    Original languageEnglish
    Article number7210154
    Pages (from-to)1024-1026
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume36
    Issue number10
    DOIs
    Publication statusPublished - 2015 Oct

    Bibliographical note

    Funding Information:
    This work was supported in part by the National Research Foundation of Korea through the Korean Government within the Ministry of Education, Science and Technology under Grant 2011-0028769, and in part by the Samsung Semiconductor Research Center, Korea University. The review of this letter was arranged by Editor D. Ha.

    Publisher Copyright:
    © 2015 IEEE.

    Keywords

    • Bilayer
    • diodelike
    • gallium oxide
    • resistive random access memory
    • silicon nitride

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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