Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx:O Bilayer Structure

Tae Ho Lee; Ju Hyun Park; Tae Geun Kim

doi:10.1109/LED.2015.2470515

Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiN_x:O Bilayer Structure

Tae Ho Lee, Ju Hyun Park, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this letter, we propose a gallium oxide/oxygen doped silicon nitride-based resistive switching device for removing sneak-path currents in high-density crossbar array structures. The device exhibited diodelike characteristics owing to a simple Schottky contact and ultralow power operating behavior (∼ 0.5 V, 1 μA) without any forming process. Both ON/OFF and rectification ratios exceeded 10³, and the fastest ac-pulse program (erase) time was 50 (80) ns. The ac-pulse program and erase tests showed 10⁵ cycle endurance without degradation, and dc test showed over 10² cycle endurance. Furthermore, data retention time was > 10⁵ s at room temperature.

Original language	English
Article number	7210154
Pages (from-to)	1024-1026
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	10
DOIs	https://doi.org/10.1109/LED.2015.2470515
Publication status	Published - 2015 Oct

Keywords

Bilayer
diodelike
gallium oxide
resistive random access memory
silicon nitride

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2015.2470515

Cite this

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title = "Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx:O Bilayer Structure",

abstract = "In this letter, we propose a gallium oxide/oxygen doped silicon nitride-based resistive switching device for removing sneak-path currents in high-density crossbar array structures. The device exhibited diodelike characteristics owing to a simple Schottky contact and ultralow power operating behavior (∼ 0.5 V, 1 μA) without any forming process. Both ON/OFF and rectification ratios exceeded 103, and the fastest ac-pulse program (erase) time was 50 (80) ns. The ac-pulse program and erase tests showed 105 cycle endurance without degradation, and dc test showed over 102 cycle endurance. Furthermore, data retention time was > 105 s at room temperature.",

keywords = "Bilayer, diodelike, gallium oxide, resistive random access memory, silicon nitride",

author = "Lee, {Tae Ho} and Park, {Ju Hyun} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported in part by the National Research Foundation of Korea through the Korean Government within the Ministry of Education, Science and Technology under Grant 2011-0028769, and in part by the Samsung Semiconductor Research Center, Korea University. The review of this letter was arranged by Editor D. Ha. Publisher Copyright: {\textcopyright} 2015 IEEE.",

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AU - Park, Ju Hyun

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported in part by the National Research Foundation of Korea through the Korean Government within the Ministry of Education, Science and Technology under Grant 2011-0028769, and in part by the Samsung Semiconductor Research Center, Korea University. The review of this letter was arranged by Editor D. Ha. Publisher Copyright: © 2015 IEEE.

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N2 - In this letter, we propose a gallium oxide/oxygen doped silicon nitride-based resistive switching device for removing sneak-path currents in high-density crossbar array structures. The device exhibited diodelike characteristics owing to a simple Schottky contact and ultralow power operating behavior (∼ 0.5 V, 1 μA) without any forming process. Both ON/OFF and rectification ratios exceeded 103, and the fastest ac-pulse program (erase) time was 50 (80) ns. The ac-pulse program and erase tests showed 105 cycle endurance without degradation, and dc test showed over 102 cycle endurance. Furthermore, data retention time was > 105 s at room temperature.

AB - In this letter, we propose a gallium oxide/oxygen doped silicon nitride-based resistive switching device for removing sneak-path currents in high-density crossbar array structures. The device exhibited diodelike characteristics owing to a simple Schottky contact and ultralow power operating behavior (∼ 0.5 V, 1 μA) without any forming process. Both ON/OFF and rectification ratios exceeded 103, and the fastest ac-pulse program (erase) time was 50 (80) ns. The ac-pulse program and erase tests showed 105 cycle endurance without degradation, and dc test showed over 102 cycle endurance. Furthermore, data retention time was > 105 s at room temperature.

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