Abstract
In this letter, we propose a gallium oxide/oxygen doped silicon nitride-based resistive switching device for removing sneak-path currents in high-density crossbar array structures. The device exhibited diodelike characteristics owing to a simple Schottky contact and ultralow power operating behavior (∼ 0.5 V, 1 μA) without any forming process. Both ON/OFF and rectification ratios exceeded 103, and the fastest ac-pulse program (erase) time was 50 (80) ns. The ac-pulse program and erase tests showed 105 cycle endurance without degradation, and dc test showed over 102 cycle endurance. Furthermore, data retention time was > 105 s at room temperature.
Original language | English |
---|---|
Article number | 7210154 |
Pages (from-to) | 1024-1026 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 36 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2015 Oct |
Keywords
- Bilayer
- diodelike
- gallium oxide
- resistive random access memory
- silicon nitride
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering