Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses

Ho Myoung An; Yu Jeong Seo; Hee Dong Kim; Kyoung Chan Kim; Jong Guk Kim; Won Ju Cho; Jung Hyuk Koh; Yun Mo Sung; Tae Geun Kim

doi:10.1016/j.tsf.2009.03.184

Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses

Ho Myoung An, Yu Jeong Seo, Hee Dong Kim, Kyoung Chan Kim, Jong Guk Kim, Won Ju Cho, Jung Hyuk Koh, Yun Mo Sung, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We examine the electrical properties of metal/oxide/nitride/oxide/silicon (MONOS) capacitors with two different blocking oxides, SiO₂ and Al₂O₃, under the influence of the same electric field. The thickness of the Al₂O₃ layer is set to 150 Å, which is electrically equivalent to a thickness of the SiO₂ layer of 65 Å, in the MONOS structure for this purpose. The capacitor with the Al₂O₃ blocking layer shows a larger capacitance-voltage memory window of 8.6 V, lower program voltage of 7 V, faster program/erase speeds of 10 ms/1 μs, lower leakage current of 100 pA and longer data retention than the one with the SiO₂ blocking layer does. These improvements are attributed to the suppression of the carrier transport to the gate electrode afforded by the use of an Al₂O₃ blocking layer physically thicker than the SiO₂ one, as well as the effective charge-trapping by Al₂O₃ at the deep energy levels in the nitride layer.

Original language	English
Pages (from-to)	5589-5592
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	18
DOIs	https://doi.org/10.1016/j.tsf.2009.03.184
Publication status	Published - 2009 Jul 31

Bibliographical note

Funding Information:
This work was supported by the MOST/KOSEF through the Quantum Photonic Science Research Center, Korea.

Keywords

Aluminum oxide
Flash memory
High-k dielectrics
SANOS
SONOS

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2009.03.184

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An, H. M., Seo, Y. J., Kim, H. D., Kim, K. C., Kim, J. G., Cho, W. J., Koh, J. H., Sung, Y. M., & Kim, T. G. (2009). Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses. Thin Solid Films, 517(18), 5589-5592. https://doi.org/10.1016/j.tsf.2009.03.184

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title = "Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses",

abstract = "We examine the electrical properties of metal/oxide/nitride/oxide/silicon (MONOS) capacitors with two different blocking oxides, SiO2 and Al2O3, under the influence of the same electric field. The thickness of the Al2O3 layer is set to 150 {\AA}, which is electrically equivalent to a thickness of the SiO2 layer of 65 {\AA}, in the MONOS structure for this purpose. The capacitor with the Al2O3 blocking layer shows a larger capacitance-voltage memory window of 8.6 V, lower program voltage of 7 V, faster program/erase speeds of 10 ms/1 μs, lower leakage current of 100 pA and longer data retention than the one with the SiO2 blocking layer does. These improvements are attributed to the suppression of the carrier transport to the gate electrode afforded by the use of an Al2O3 blocking layer physically thicker than the SiO2 one, as well as the effective charge-trapping by Al2O3 at the deep energy levels in the nitride layer.",

keywords = "Aluminum oxide, Flash memory, High-k dielectrics, SANOS, SONOS",

author = "An, {Ho Myoung} and Seo, {Yu Jeong} and Kim, {Hee Dong} and Kim, {Kyoung Chan} and Kim, {Jong Guk} and Cho, {Won Ju} and Koh, {Jung Hyuk} and Sung, {Yun Mo} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported by the MOST/KOSEF through the Quantum Photonic Science Research Center, Korea.",

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doi = "10.1016/j.tsf.2009.03.184",

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AU - An, Ho Myoung

AU - Seo, Yu Jeong

AU - Kim, Hee Dong

AU - Kim, Kyoung Chan

AU - Kim, Jong Guk

AU - Cho, Won Ju

AU - Koh, Jung Hyuk

AU - Sung, Yun Mo

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported by the MOST/KOSEF through the Quantum Photonic Science Research Center, Korea.

PY - 2009/7/31

Y1 - 2009/7/31

N2 - We examine the electrical properties of metal/oxide/nitride/oxide/silicon (MONOS) capacitors with two different blocking oxides, SiO2 and Al2O3, under the influence of the same electric field. The thickness of the Al2O3 layer is set to 150 Å, which is electrically equivalent to a thickness of the SiO2 layer of 65 Å, in the MONOS structure for this purpose. The capacitor with the Al2O3 blocking layer shows a larger capacitance-voltage memory window of 8.6 V, lower program voltage of 7 V, faster program/erase speeds of 10 ms/1 μs, lower leakage current of 100 pA and longer data retention than the one with the SiO2 blocking layer does. These improvements are attributed to the suppression of the carrier transport to the gate electrode afforded by the use of an Al2O3 blocking layer physically thicker than the SiO2 one, as well as the effective charge-trapping by Al2O3 at the deep energy levels in the nitride layer.

AB - We examine the electrical properties of metal/oxide/nitride/oxide/silicon (MONOS) capacitors with two different blocking oxides, SiO2 and Al2O3, under the influence of the same electric field. The thickness of the Al2O3 layer is set to 150 Å, which is electrically equivalent to a thickness of the SiO2 layer of 65 Å, in the MONOS structure for this purpose. The capacitor with the Al2O3 blocking layer shows a larger capacitance-voltage memory window of 8.6 V, lower program voltage of 7 V, faster program/erase speeds of 10 ms/1 μs, lower leakage current of 100 pA and longer data retention than the one with the SiO2 blocking layer does. These improvements are attributed to the suppression of the carrier transport to the gate electrode afforded by the use of an Al2O3 blocking layer physically thicker than the SiO2 one, as well as the effective charge-trapping by Al2O3 at the deep energy levels in the nitride layer.

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Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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