Direct evidence of void passivation in Cu(InGa)(SSe)2 absorber layers

Dongho Lee, Jaehan Lee, Sung Heo, Jong Bong Park, Young Su Kim, Chan B. Mo, Kwangsoo Huh, Jungyup Yang, Junggyu Nam, Dohyun Baek, Sungchan Park, Byoungjune Kim, Dongseop Kim, Yoonmook Kang

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13 Citations (Scopus)


We have investigated the charge collection condition around voids in copper indium gallium sulfur selenide (CIGSSe) solar cells fabricated by sputter and a sequential process of selenization/sulfurization. In this study, we found direct evidence of void passivation by using the junction electron beam induced current method, transmission electron microscopy, and energy dispersive X-ray spectroscopy. The high sulfur concentration at the void surface plays an important role in the performance enhancement of the device. The recombination around voids is effectively suppressed by field-assisted void passivation. Hence, the generated carriers are easily collected by the electrodes. Therefore, when the S/(S + Se) ratio at the void surface is over 8% at room temperature, the device performance degradation caused by the recombination at the voids is negligible at the CIGSSe layer.

Original languageEnglish
Article number083903
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 2015 Feb 23

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© 2015 AIP Publishing LLC.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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