Abstract
SiC nanorod was grown by APCVD using TMS. Grown SiC nanorods had a 10 ∼ 60nm diameters and lengths of several micrometers. Nanorod's diameters and lengths were different by kind of catalysts. Nanorod's growth scheme was divided by two regions with diameter's variations. At first region, nanorod was grown by VLS mechanism, but at the second region, nanorod growth was made by VS reaction. These differences were made from limitations of growth rate and deactivation effects. Growth temperature, time and flow rates of source gases were affected nanorod's diametesr and its lengths. And the kind of catalysts and coating methods were affected growth direction and microstructures too.
| Original language | English |
|---|---|
| Pages (from-to) | 701-704 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 449-452 |
| Issue number | II |
| DOIs | |
| Publication status | Published - 2004 |
| Event | Designing, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials - Jeju Island, Korea, Republic of Duration: 2003 Nov 5 → 2003 Nov 8 |
Keywords
- APCVD
- Nanorod
- SiC
- SiC nanorod
- Tetramethylsilane
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering