Abstract
To enhance the light extraction efficiency of the GaN-based light emitting diode (LED), indium tin oxide (ITO) nanoparticle photonic crystal patterns are fabricated on the surface of the GaN-based blue LED device using the direct printing technique of the ITO nanoparticles. According to electroluminescence (EL) measurements, the EL intensity of the GaN-based blue LED with photonic crystal patterns is 28% higher than an identical LED without photonic crystal patterns. Printing the ITO nanoparticles eliminates the need for a plasma etching process of the ITO layer so that the current-voltage characteristics do not degrade.
Original language | English |
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Pages (from-to) | H1067-H1070 |
Journal | Journal of the Electrochemical Society |
Volume | 157 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2010 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry