Direct nanowiring of carbon nanotubes for high integrated electronic and spintropic devices

Yun-Hi Lee; Yoon Taek Jang; Chang Hoon Choi; Dong Ho Kim; Chang Woo Lee; Jae Eun Lee; Young Soo Han; Sang Soo Yoon; Jin Koog Shin; Sung Tae Kim; Eun Kyu Kim; Byeong Kwon Ju

doi:10.1002/1521-4095(200109)13:18<1371::AID-ADMA1371>3.0.CO;2-S

Direct nanowiring of carbon nanotubes for high integrated electronic and spintropic devices

Yun-Hi Lee, Yoon Taek Jang, Chang Hoon Choi, Dong Ho Kim, Chang Woo Lee, Jae Eun Lee, Young Soo Han, Sang Soo Yoon, Jin Koog Shin, Sung Tae Kim, Eun Kyu Kim, Byeong Kwon Ju

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

Carbon nanotubes were directly nanowired using growth barrier technology utilizing chemical vapor deposition (CVD) at the relatively low process temperature of 650-750°C. Using this method, CNTs bridging two parallel patterned structures with a perfect "Y-junction" or "straight line" were formed.

Original language	English
Pages (from-to)	1371-1373
Number of pages	3
Journal	Advanced Materials
Volume	13
Issue number	18
DOIs	https://doi.org/10.1002/1521-4095(200109)13:18<1371::AID-ADMA1371>3.0.CO;2-S
Publication status	Published - 2001 Sept 14

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/1521-4095(200109)13:18<1371::AID-ADMA1371>3.0.CO;2-S

Cite this

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title = "Direct nanowiring of carbon nanotubes for high integrated electronic and spintropic devices",

abstract = "Carbon nanotubes were directly nanowired using growth barrier technology utilizing chemical vapor deposition (CVD) at the relatively low process temperature of 650-750°C. Using this method, CNTs bridging two parallel patterned structures with a perfect {"}Y-junction{"} or {"}straight line{"} were formed.",

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AU - Lee, Yun-Hi

AU - Jang, Yoon Taek

AU - Choi, Chang Hoon

AU - Kim, Dong Ho

AU - Lee, Chang Woo

AU - Lee, Jae Eun

AU - Han, Young Soo

AU - Yoon, Sang Soo

AU - Shin, Jin Koog

AU - Kim, Sung Tae

AU - Kim, Eun Kyu

AU - Ju, Byeong Kwon

PY - 2001/9/14

Y1 - 2001/9/14

N2 - Carbon nanotubes were directly nanowired using growth barrier technology utilizing chemical vapor deposition (CVD) at the relatively low process temperature of 650-750°C. Using this method, CNTs bridging two parallel patterned structures with a perfect "Y-junction" or "straight line" were formed.

AB - Carbon nanotubes were directly nanowired using growth barrier technology utilizing chemical vapor deposition (CVD) at the relatively low process temperature of 650-750°C. Using this method, CNTs bridging two parallel patterned structures with a perfect "Y-junction" or "straight line" were formed.

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DO - 10.1002/1521-4095(200109)13:18<1371::AID-ADMA1371>3.0.CO;2-S

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Direct nanowiring of carbon nanotubes for high integrated electronic and spintropic devices

Abstract

ASJC Scopus subject areas

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