Direct Observation of Localized Defect States in Semiconductor Nanotube Junctions

Hajin Kim; J. Lee; S. J. Kahng; Y. W. Son; S. B. Lee; C. K. Lee; J. Ihm; Young Kuk

doi:10.1103/PhysRevLett.90.216107

Direct Observation of Localized Defect States in Semiconductor Nanotube Junctions

Hajin Kim, J. Lee, S. J. Kahng, Y. W. Son, S. B. Lee, C. K. Lee, J. Ihm, Young Kuk

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We report scanning tunneling microscopy of semiconductor-semiconductor carbon nanotube junctions with different band gaps. Characteristic features of the wave functions at different energy levels, such as a localized defect state, are clearly exhibited in the atomically resolved scanning tunneling spectroscopy. The peaks of the Van Hove singularity on each side penetrate and decay into the opposite side across the junction over a distance of [Formula presented]. These experimental features are accounted for, with the help of tight-binding calculation, by the presence of pentagon-heptagon pair defects at the junction.

Original language	English
Pages (from-to)	4
Number of pages	1
Journal	Physical review letters
Volume	90
Issue number	21
DOIs	https://doi.org/10.1103/PhysRevLett.90.216107
Publication status	Published - 2003

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1103/PhysRevLett.90.216107

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title = "Direct Observation of Localized Defect States in Semiconductor Nanotube Junctions",

abstract = "We report scanning tunneling microscopy of semiconductor-semiconductor carbon nanotube junctions with different band gaps. Characteristic features of the wave functions at different energy levels, such as a localized defect state, are clearly exhibited in the atomically resolved scanning tunneling spectroscopy. The peaks of the Van Hove singularity on each side penetrate and decay into the opposite side across the junction over a distance of [Formula presented]. These experimental features are accounted for, with the help of tight-binding calculation, by the presence of pentagon-heptagon pair defects at the junction.",

author = "Hajin Kim and J. Lee and Kahng, {S. J.} and Son, {Y. W.} and Lee, {S. B.} and Lee, {C. K.} and J. Ihm and Young Kuk",

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AU - Kim, Hajin

AU - Lee, J.

AU - Kahng, S. J.

AU - Son, Y. W.

AU - Lee, S. B.

AU - Lee, C. K.

AU - Ihm, J.

AU - Kuk, Young

PY - 2003

Y1 - 2003

N2 - We report scanning tunneling microscopy of semiconductor-semiconductor carbon nanotube junctions with different band gaps. Characteristic features of the wave functions at different energy levels, such as a localized defect state, are clearly exhibited in the atomically resolved scanning tunneling spectroscopy. The peaks of the Van Hove singularity on each side penetrate and decay into the opposite side across the junction over a distance of [Formula presented]. These experimental features are accounted for, with the help of tight-binding calculation, by the presence of pentagon-heptagon pair defects at the junction.

AB - We report scanning tunneling microscopy of semiconductor-semiconductor carbon nanotube junctions with different band gaps. Characteristic features of the wave functions at different energy levels, such as a localized defect state, are clearly exhibited in the atomically resolved scanning tunneling spectroscopy. The peaks of the Van Hove singularity on each side penetrate and decay into the opposite side across the junction over a distance of [Formula presented]. These experimental features are accounted for, with the help of tight-binding calculation, by the presence of pentagon-heptagon pair defects at the junction.

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JO - Physical review letters

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Direct Observation of Localized Defect States in Semiconductor Nanotube Junctions

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