Direct patterning of nanoscale cu2o resistive material for soft nanoelectronics

Sung Hoon Hong, Joong Yeon Cho, Ki Yeon Yang, Heon Lee

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We demonstrate a simple direct nanoimprint lithography method of fabricating a copper oxide memory device for soft nanoelectronics. The process was done at room temperature with low pressure, so that a Cu2O resistive nanoarray could be fabricated not only on the Si substrate but also on the flexible polyimide substrate. The resistive switching of the fabricated 200nm Cu2O nanopillar was observed at 2 V with a low current compliance of 5 μA from a high-resistance state to a low-resistance state, and the reversible switching was done with a fast switching time of 10 ns and high endurance.

Original languageEnglish
Article number126501
JournalApplied Physics Express
Issue number12
Publication statusPublished - 2012 Dec

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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