Direct patterning of nanoscale cu₂o resistive material for soft nanoelectronics

We demonstrate a simple direct nanoimprint lithography method of fabricating a copper oxide memory device for soft nanoelectronics. The process was done at room temperature with low pressure, so that a Cu₂O resistive nanoarray could be fabricated not only on the Si substrate but also on the flexible polyimide substrate. The resistive switching of the fabricated 200nm Cu₂O nanopillar was observed at 2 V with a low current compliance of 5 μA from a high-resistance state to a low-resistance state, and the reversible switching was done with a fast switching time of 10 ns and high endurance.