Abstract
We demonstrate a simple direct nanoimprint lithography method of fabricating a copper oxide memory device for soft nanoelectronics. The process was done at room temperature with low pressure, so that a Cu2O resistive nanoarray could be fabricated not only on the Si substrate but also on the flexible polyimide substrate. The resistive switching of the fabricated 200nm Cu2O nanopillar was observed at 2 V with a low current compliance of 5 μA from a high-resistance state to a low-resistance state, and the reversible switching was done with a fast switching time of 10 ns and high endurance.
Original language | English |
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Article number | 126501 |
Journal | Applied Physics Express |
Volume | 5 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2012 Dec |
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy