Direct-write complementary graphene field effect transistors and junctions via near-field electrospinning

Jiyoung Chang; Yumeng Liu; Kwang Heo; Byung Yang Lee; Seung Wuk Lee; Liwei Lin

doi:10.1002/smll.201302965

Direct-write complementary graphene field effect transistors and junctions via near-field electrospinning

Jiyoung Chang
, Yumeng Liu
, Kwang Heo
, Byung Yang Lee
, Seung Wuk Lee
, Liwei Lin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

A novel process to create self-aligned and chemically doped graphene channel is presented. Near-field electrospinning is utilized to pattern and chemically dope the graphene layer using functionalized polymers such as PEI and PEO. Field effects of p- and n-type graphene channel transistors are fabricated and complimentary inverter circuitry using electronic junctions is successfully demonstrated.

Original language	English
Pages (from-to)	1920-1925
Number of pages	6
Journal	Small
Volume	10
Issue number	10
DOIs	https://doi.org/10.1002/smll.201302965
Publication status	Published - 2014 May 28

Keywords

electrical junction
field effect transistor
graphene
graphene doping
near-field electrospinning

ASJC Scopus subject areas

General Chemistry
Engineering (miscellaneous)
Biotechnology
General Materials Science
Biomaterials

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10.1002/smll.201302965

Cite this

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title = "Direct-write complementary graphene field effect transistors and junctions via near-field electrospinning",

abstract = "A novel process to create self-aligned and chemically doped graphene channel is presented. Near-field electrospinning is utilized to pattern and chemically dope the graphene layer using functionalized polymers such as PEI and PEO. Field effects of p- and n-type graphene channel transistors are fabricated and complimentary inverter circuitry using electronic junctions is successfully demonstrated.",

keywords = "electrical junction, field effect transistor, graphene, graphene doping, near-field electrospinning",

author = "Jiyoung Chang and Yumeng Liu and Kwang Heo and Lee, \{Byung Yang\} and Lee, \{Seung Wuk\} and Liwei Lin",

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T1 - Direct-write complementary graphene field effect transistors and junctions via near-field electrospinning

AU - Chang, Jiyoung

AU - Liu, Yumeng

AU - Heo, Kwang

AU - Lee, Byung Yang

AU - Lee, Seung Wuk

AU - Lin, Liwei

PY - 2014/5/28

Y1 - 2014/5/28

N2 - A novel process to create self-aligned and chemically doped graphene channel is presented. Near-field electrospinning is utilized to pattern and chemically dope the graphene layer using functionalized polymers such as PEI and PEO. Field effects of p- and n-type graphene channel transistors are fabricated and complimentary inverter circuitry using electronic junctions is successfully demonstrated.

AB - A novel process to create self-aligned and chemically doped graphene channel is presented. Near-field electrospinning is utilized to pattern and chemically dope the graphene layer using functionalized polymers such as PEI and PEO. Field effects of p- and n-type graphene channel transistors are fabricated and complimentary inverter circuitry using electronic junctions is successfully demonstrated.

KW - electrical junction

KW - field effect transistor

KW - graphene

KW - graphene doping

KW - near-field electrospinning

UR - https://www.scopus.com/pages/publications/84901261763

U2 - 10.1002/smll.201302965

DO - 10.1002/smll.201302965

M3 - Article

AN - SCOPUS:84901261763

SN - 1613-6810

VL - 10

SP - 1920

EP - 1925

JO - Small

JF - Small

IS - 10

ER -

Direct-write complementary graphene field effect transistors and junctions via near-field electrospinning

Abstract

Keywords

ASJC Scopus subject areas

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