Direct-write n- and p-type graphene channel FETs

Jiyoung Chang; Yumeng Liu; Heo Kwang; Byung Yang Lee; Seung Wuk Lee; Liwei Lin

doi:10.1109/MEMSYS.2013.6474212

Direct-write n- and p-type graphene channel FETs

Jiyoung Chang, Yumeng Liu, Heo Kwang, Byung Yang Lee, Seung Wuk Lee, Liwei Lin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

This paper presents a maskless, direct-write process to create both n- and p-type graphene channel FETs (Field Effect Transistors) on a single substrate. There are following achievements as compared with previous works: (1) direct deposition of controllable, arbitrary fiber patterns to construct graphene-based transistor, in which near-field electrospinning process is integrated to pattern the polymer fibers; (2) a maskless doping process to make both n-and/or p-type graphene on the same substrate, in which electrospun fibers serve as both the oxygen plasma etching mask and chemical doping sources, simultaneously; and As such, the demonstrated process could open up a new class of graphene-based devices for various applications.

Original language	English
Title of host publication	IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013
Pages	201-204
Number of pages	4
DOIs	https://doi.org/10.1109/MEMSYS.2013.6474212
Publication status	Published - 2013
Event	IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013 - Taipei, Taiwan, Province of China Duration: 2013 Jan 20 → 2013 Jan 24

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)	1084-6999

Other

Other	IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013
Country/Territory	Taiwan, Province of China
City	Taipei
Period	13/1/20 → 13/1/24

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/MEMSYS.2013.6474212

Cite this

Chang, J., Liu, Y., Kwang, H., Lee, B. Y., Lee, S. W., & Lin, L. (2013). Direct-write n- and p-type graphene channel FETs. In IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013 (pp. 201-204). Article 6474212 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). https://doi.org/10.1109/MEMSYS.2013.6474212

Direct-write n- and p-type graphene channel FETs. / Chang, Jiyoung; Liu, Yumeng; Kwang, Heo et al.
IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013. 2013. p. 201-204 6474212 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chang, J, Liu, Y, Kwang, H, Lee, BY, Lee, SW & Lin, L 2013, Direct-write n- and p-type graphene channel FETs. in IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013., 6474212, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), pp. 201-204, IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013, Taipei, Taiwan, Province of China, 13/1/20. https://doi.org/10.1109/MEMSYS.2013.6474212

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abstract = "This paper presents a maskless, direct-write process to create both n- and p-type graphene channel FETs (Field Effect Transistors) on a single substrate. There are following achievements as compared with previous works: (1) direct deposition of controllable, arbitrary fiber patterns to construct graphene-based transistor, in which near-field electrospinning process is integrated to pattern the polymer fibers; (2) a maskless doping process to make both n-and/or p-type graphene on the same substrate, in which electrospun fibers serve as both the oxygen plasma etching mask and chemical doping sources, simultaneously; and As such, the demonstrated process could open up a new class of graphene-based devices for various applications.",

author = "Jiyoung Chang and Yumeng Liu and Heo Kwang and Lee, {Byung Yang} and Lee, {Seung Wuk} and Liwei Lin",

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AB - This paper presents a maskless, direct-write process to create both n- and p-type graphene channel FETs (Field Effect Transistors) on a single substrate. There are following achievements as compared with previous works: (1) direct deposition of controllable, arbitrary fiber patterns to construct graphene-based transistor, in which near-field electrospinning process is integrated to pattern the polymer fibers; (2) a maskless doping process to make both n-and/or p-type graphene on the same substrate, in which electrospun fibers serve as both the oxygen plasma etching mask and chemical doping sources, simultaneously; and As such, the demonstrated process could open up a new class of graphene-based devices for various applications.

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Direct-write n- and p-type graphene channel FETs

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