Dislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structures

Emre Sari; Lee Woon Jang; Jong Hyeob Baek; In Hwan Lee; Xiao Wei Sun; Hilmi Volkan Demir

doi:10.1364/OE.21.001128

Dislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structures

Emre Sari, Lee Woon Jang, Jong Hyeob Baek, In Hwan Lee, Xiao Wei Sun, Hilmi Volkan Demir

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We study electroabsorption (EA) behavior of InGaN/GaN quantum structures grown using epitaxial lateral overgrowth (ELOG) in correlation with their dislocation density levels and in comparison to steady state and time-resolved photoluminescence measurements. The results reveal that ELOG structures with decreasing mask stripe widths exhibit stronger EA performance, with a maximum EA enhancement factor of 4.8 compared to the reference without ELOG. The analyses show that the EA performance follows similar trends with decreasing dislocation density as the essential parameters of the photoluminescence spectra (peak position, width and intensity) together with the photoluminescence lifetimes. While keeping the growth window widths constant, compared to photoluminescence behavior, however, EA surprisingly exhibits the largest performance variation, making EA the most sensitive to the mask stripe widths

Original language	English
Pages (from-to)	1128-1136
Number of pages	9
Journal	Optics Express
Volume	21
Issue number	1
DOIs	https://doi.org/10.1364/OE.21.001128
Publication status	Published - 2013 Jan 14
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "Dislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structures",

abstract = "We study electroabsorption (EA) behavior of InGaN/GaN quantum structures grown using epitaxial lateral overgrowth (ELOG) in correlation with their dislocation density levels and in comparison to steady state and time-resolved photoluminescence measurements. The results reveal that ELOG structures with decreasing mask stripe widths exhibit stronger EA performance, with a maximum EA enhancement factor of 4.8 compared to the reference without ELOG. The analyses show that the EA performance follows similar trends with decreasing dislocation density as the essential parameters of the photoluminescence spectra (peak position, width and intensity) together with the photoluminescence lifetimes. While keeping the growth window widths constant, compared to photoluminescence behavior, however, EA surprisingly exhibits the largest performance variation, making EA the most sensitive to the mask stripe widths",

author = "Emre Sari and Jang, {Lee Woon} and Baek, {Jong Hyeob} and Lee, {In Hwan} and Sun, {Xiao Wei} and Demir, {Hilmi Volkan}",

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AU - Sari, Emre

AU - Jang, Lee Woon

AU - Baek, Jong Hyeob

AU - Lee, In Hwan

AU - Sun, Xiao Wei

AU - Demir, Hilmi Volkan

PY - 2013/1/14

Y1 - 2013/1/14

N2 - We study electroabsorption (EA) behavior of InGaN/GaN quantum structures grown using epitaxial lateral overgrowth (ELOG) in correlation with their dislocation density levels and in comparison to steady state and time-resolved photoluminescence measurements. The results reveal that ELOG structures with decreasing mask stripe widths exhibit stronger EA performance, with a maximum EA enhancement factor of 4.8 compared to the reference without ELOG. The analyses show that the EA performance follows similar trends with decreasing dislocation density as the essential parameters of the photoluminescence spectra (peak position, width and intensity) together with the photoluminescence lifetimes. While keeping the growth window widths constant, compared to photoluminescence behavior, however, EA surprisingly exhibits the largest performance variation, making EA the most sensitive to the mask stripe widths

AB - We study electroabsorption (EA) behavior of InGaN/GaN quantum structures grown using epitaxial lateral overgrowth (ELOG) in correlation with their dislocation density levels and in comparison to steady state and time-resolved photoluminescence measurements. The results reveal that ELOG structures with decreasing mask stripe widths exhibit stronger EA performance, with a maximum EA enhancement factor of 4.8 compared to the reference without ELOG. The analyses show that the EA performance follows similar trends with decreasing dislocation density as the essential parameters of the photoluminescence spectra (peak position, width and intensity) together with the photoluminescence lifetimes. While keeping the growth window widths constant, compared to photoluminescence behavior, however, EA surprisingly exhibits the largest performance variation, making EA the most sensitive to the mask stripe widths

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Dislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structures

Abstract

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