Nonradiative recombination rate that consists of dislocation-related nonradiative recombination rate (A0) and surface recombination rate (As) is one of the major parameters determining the performance of microlight-emitting diodes (µLEDs). Recent demonstrations improving the efficiency of blue InGaN or red AlGaInP µLEDs using specific methods such as atomic layer deposition or chemical treatment confirm the suppression of As. However, it is hardly found that those methods effectively improve the efficiency of red InGaN µLEDs so far. Here, it is discovered that the dislocation leads to an ineffective As. First, an intrinsic As degrades the external quantum efficiency (EQE) of blue InGaN µLEDs, resulting in EQE decreases with shrinking size. Second, panchromatic cathodoluminescence finds evidence that most of the carriers can be trapped before reaching the sidewall due to high A0. This results in shortened diffusion length of carriers and reduces the number of carriers reaching the sidewall. Consequently, the opposite trend of increasing EQE with shrinking size occurs in the case of red InGaN µLEDs due to an ineffective As. Furthermore, an 8.3 nm quantum well of InGaN with 13% Indium content that can reach a ≈690 nm wavelength at the low current is shown.
Bibliographical noteFunding Information:
J.‐H.P., T.‐Y.S., and H.A. acknowledge financial support from the National Research Foundation (NRF) of Korea funded by the Ministry of Science and ICT (GRL programme: NRF‐2017K1A1A2013160). T.‐Y.S. was also supported by the NRF of Korea (NRF‐2022R1A2C2006887). D.‐S. Lee acknowledges financial support from LG Yonam Foundation of Korea. J.‐H.P. would like to thank Prof. Yoshio Honda (Nagoya University) for his kind management of CL equipment.
© 2023 Wiley-VCH GmbH.
- external quantum efficiency
- red InGaN LED
- surface recombination
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics