Disorder and ferromagnetism in diluted magnetic semiconductors

S. R. Eric Yang, A. H. MacDonald

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    43 Citations (Scopus)

    Abstract

    We have investigated the interplay between disorder and ferromagnetism in III1-xMnx V semiconductors. Our study is based on a model in which S = 5/2 Mn local moments are exchange coupled to valence-band holes that interact via Coulomb interactions with each other, with ionized Mn acceptors, and with the antisite defects present in these materials. We find quasiparticle participation ratios consistent with a metal-insulator transition that occurs in the ferromagnetic state near x∼0.01. By evaluating the distribution of exchange mean fields at Mn moment sites, we provide evidence in favor of the applicability of impurity-band magnetic-polaron and hole-fluid models on insulating and metallic sides of the phase transition, respectively.

    Original languageEnglish
    Article number155202
    Pages (from-to)1552021-1552026
    Number of pages6
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume67
    Issue number15
    DOIs
    Publication statusPublished - 2003 Apr 2

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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