Abstract
AlGaAs-GaAs V-groove quantum-wire (QWR) array lasers were fabricated by one-step grown metalorganic chemical vapor deposition (MOCVD) and characterized with the reference quantum-well (QW) lasers grown side-by-side in the same run. Room-temperature (RT) lasing at a considerably low threshold current of 65 mA was obtained in the wire direction while it was considerably delayed up to 230 mA in the distributed feedback (DFB) direction due to the occurrence of the large spontaneous emission. However, in the DFB direction, little trace of the stop band and the coincidence between the QWR gain (828 nm) and Bragg wavelengths (827 nm) were experimentally observed, which can be attributed to the gain-coupled DFB effects using a QWR active grating.
Original language | English |
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Pages (from-to) | 4162-4165 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 42 |
Issue number | 6 B |
DOIs | |
Publication status | Published - 2003 Jun |
Externally published | Yes |
Keywords
- Distributed feedback (DFB) lasers
- Gain-coupling
- MOCVD
- Quantum-wires
- Semiconductor laser
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)