Abstract
Integration of semiconductor nano-structures (NS) with conventional optoelectronic devices is important to draw technical breakthrough in their performance. One of the interesting examples in semiconductor lasers is realizing a gain-coupled distributed-feedback (GC-DFB) laser using V-groove quantum-wire (QWR) arrays. In this paper we have tried to get GC-DFB lasers to operate at room temperature (RT) by (1) eliminating the process for grating overgrowth and (2) modulating the QWR active grating profiles.
Original language | English |
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Title of host publication | 2002 International Microprocesses and Nanotechnology Conference, MNC 2002 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 142 |
Number of pages | 1 |
ISBN (Print) | 4891140313, 9784891140311 |
DOIs | |
Publication status | Published - 2002 |
Externally published | Yes |
Event | International Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan Duration: 2002 Nov 6 → 2002 Nov 8 |
Other
Other | International Microprocesses and Nanotechnology Conference, MNC 2002 |
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Country/Territory | Japan |
City | Tokyo |
Period | 02/11/6 → 02/11/8 |
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering