Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors

Juhee Jeon, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Challenges in scaling dynamic random-access memory (DRAM) have become a crucial problem for implementing high-density and high-performance memory devices. Feedback field-effect transistors (FBFETs) have great potential to overcome the scaling challenges because of their one-transistor (1T) memory behaviors with a capacitorless structure. Although FBFETs have been studied as 1T memory devices, the reliability in an array must be evaluated. Cell reliability is closely related to device malfunction. Hence, in this study, we propose a 1T DRAM consisting of an FBFET with a p+–n–p–n+ silicon nanowire and investigate the memory operation and disturbance in a 3 × 3 array structure through mixed-mode simulations. The 1T DRAM exhibits a write speed of 2.5 ns, a sense margin of 90 μA/μm, and a retention time of approximately 1 s. Moreover, the energy consumption is 5.0 × 10−15 J/bit for the write ‘1’ operation and 0 J/bit for the hold operation. Furthermore, the 1T DRAM shows nondestructive read characteristics, reliable 3 × 3 array operation without any write disturbance, and feasibility in a massive array with an access time of a few nanoseconds.

Original languageEnglish
Article number1138
Issue number6
Publication statusPublished - 2023 Jun

Bibliographical note

Funding Information:
This research was funded by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (2020R1A2C3004538, 2022M3I7A3046571) and the Brain Korea 21 Plus Project, and Samsung Electronics (IO201223-08257-01).

Publisher Copyright:
© 2023 by the authors.


  • feedback field-effect transistor
  • memory array
  • one-transistor dynamic random-access memory
  • positive feedback mechanism
  • silicon nanowire

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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