TY - GEN
T1 - DLTS
T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
AU - Khan, Aurangzeb
AU - Yamaguchi, Masafumi
AU - Lee, Hae Seok
AU - Ekins-Daukes, Nicholas J.
AU - Takamoto, Tatsuya
AU - Imaizumi, Mitsuru
AU - Taylor, Steve
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2006
Y1 - 2006
N2 - Deep level transient spectroscopy (DLTS) is the best technique for monitoring and characterizing deep levels introduced intentionally or occurring naturally in semiconductor materials and complete devices. DLTS has the advantage over all the techniques used to-date in that it fulfils almost all the requirements for a complete characterization of a deep centre and their correlation with the device properties. In particular the method can determine the activation energy of a deep level, its capture cross-section and concentration and can distinguish between traps and recombination centers. In this invited paper we provide an overview of the extensive R&D work that has been carrier out by the authors on the identification of the recombination and compensator centers in Si and III-V compound materials for space solar cells. In addition, we present an overview of key problems that remain in the understanding of the role of the point defects and their correlation with the solar cell parameters.
AB - Deep level transient spectroscopy (DLTS) is the best technique for monitoring and characterizing deep levels introduced intentionally or occurring naturally in semiconductor materials and complete devices. DLTS has the advantage over all the techniques used to-date in that it fulfils almost all the requirements for a complete characterization of a deep centre and their correlation with the device properties. In particular the method can determine the activation energy of a deep level, its capture cross-section and concentration and can distinguish between traps and recombination centers. In this invited paper we provide an overview of the extensive R&D work that has been carrier out by the authors on the identification of the recombination and compensator centers in Si and III-V compound materials for space solar cells. In addition, we present an overview of key problems that remain in the understanding of the role of the point defects and their correlation with the solar cell parameters.
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U2 - 10.1109/WCPEC.2006.279832
DO - 10.1109/WCPEC.2006.279832
M3 - Conference contribution
AN - SCOPUS:41749106414
SN - 1424400163
SN - 9781424400164
T3 - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
SP - 1763
EP - 1768
BT - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
PB - IEEE Computer Society
Y2 - 7 May 2006 through 12 May 2006
ER -
