Abstract
In the hardware implementation of deep learning algorithms such as, convolutional neural networks (CNNs) and binarized neural networks (BNNs), multiple dot products and memories for storing parameters take a significant portion of area and power consumption. In this paper, we propose a domain wall memory (DWM) based design of CNN and BNN convolutional layers. In the proposed design, the resistive cell sensing mechanism is efficiently exploited to design low-cost DWM-based cell arrays for storing parameters. The unique serial access mechanism and small footprint of DWM are also used to reduce the area and energy cost of DWM-based design for filter sliding. Simulation results with 65 nm CMOS process show 45% and 43% of energy savings compared to the conventional CNN and BNN design approach, respectively.
Original language | English |
---|---|
Article number | 8963965 |
Pages (from-to) | 19783-19798 |
Number of pages | 16 |
Journal | IEEE Access |
Volume | 8 |
DOIs | |
Publication status | Published - 2020 |
Bibliographical note
Funding Information:This work was supported in part by the National Research Foundation of Korea under Grant NRF-2015M3D1A1070465, in part by the Ministry of Science (MSIT) and ICT, South Korea, under the Information Technology Research Center (ITRC) under Grant IITP-2020-2018-0-01433) supervised by the Institute for Information & Communications Technology Promotion (IITP), and in part by the Industrial Strategic Technology Development Program under Grant 10077445, and in part by the Development of SoC Technology based on Spiking Neural Cell for smart mobile and IoT Devices funded by the Ministry of Trade, Industry and Energy (MOTIE, Korea).
Publisher Copyright:
© 2013 IEEE.
Keywords
- Binarized neural network
- convolutional neural network
- deep neural network
- domain wall memory
ASJC Scopus subject areas
- General Computer Science
- General Materials Science
- General Engineering