Domain wall width and velocity behaviors in notched magnetic devices

Se Dong Kim, Byong Sun Chun, Young Keun Kim

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

Current-induced domain wall motion on a magnetic strip has been studied for its potential application to magnetic logic and memory devices. In this study, we carried out a series of calculations to investigate the changes of the domain wall velocity and width as a function of the notch shape using the Landau-Lifschitz-Gilbert solver. The domain wall had a uniform velocity when the notches were shallow and wide, while the width of the domain wall became narrow when the notches were deep and narrow. To produce a domain wall structure with both a uniform velocity and a narrow width, an asymmetric notch shape was devised.

Original languageEnglish
Article number09F504
JournalJournal of Applied Physics
Volume101
Issue number9
DOIs
Publication statusPublished - 2007

Bibliographical note

Funding Information:
This work was supported by Grant No. M10500000105-05J0000-10510 from the National Research Laboratory Program of the Korea Science and Engineering Foundation and by the National Program for Teralevel Nanodevices as a 21st Century Frontier Program.

ASJC Scopus subject areas

  • General Physics and Astronomy

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