Keyphrases
Undoped
100%
N-GaN
100%
Si-doped
100%
Non-uniformity
100%
Epitaxial Lateral Overgrowth
100%
Donor Concentration
100%
Vertical Growth
66%
Donor Density
66%
Electron Beam Induced Current
66%
Anisotropy
33%
Collection Efficiency
33%
Electron Beam
33%
Schottky Diode
33%
GaN Films
33%
Charge Carriers
33%
Selective Growth
33%
Diffusion Length
33%
Theoretical Modeling
33%
Lateralized Overgrowth
33%
Capacitance-voltage Profiling
33%
Incorporation Efficiency
33%
Si Incorporation
33%
Engineering
Energy Engineering
100%
Collection Efficiency
100%
Diffusion Length
100%
Fitting Parameter
100%
Incorporation Efficiency
100%
Charge Carrier
100%
Material Science
Film
100%
Density
100%
Anisotropy
50%
Capacitance
50%
Charge Carrier
50%
Schottky Diode
50%
Theoretical Modeling
50%
Earth and Planetary Sciences
Electron Beam
100%
Schottky Diode
33%
Diffusion Length
33%
Charge Carrier
33%