We investigate dopant-dependence of low temperature dopant activation technique in α-Si featuring one-step metal-induced crystallization (MIC) to decrease resistivity of p and n Si films by forming Ni xSi y. Ni not only crystallizes p-type α-Si film but also facilitates activation of boron atoms in the α-Si during the crystallization at 500°C. However, phosphorus atoms are poorly activated because of the suppressed Ni-MIC rate in n-type α-Si. Finally, p/n and n/p junction diodes are demonstrated on single crystalline Si substrates by the low temperature dopant activation technique promising for high performance TFTs as well as transistors with an elevated S/D.
|Number of pages||3|
|Journal||Current Applied Physics|
|Publication status||Published - 2012 May|
- One-step MIC
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)