Dopant-dependence of one-step metal-induced dopant activation process in silicon

Jin Hong Park; Woo Shik Jung; Hyun Yong Yu

doi:10.1016/j.cap.2012.01.002

Dopant-dependence of one-step metal-induced dopant activation process in silicon

Jin Hong Park, Woo Shik Jung, Hyun Yong Yu

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We investigate dopant-dependence of low temperature dopant activation technique in α-Si featuring one-step metal-induced crystallization (MIC) to decrease resistivity of p and n Si films by forming Ni _xSi _y. Ni not only crystallizes p-type α-Si film but also facilitates activation of boron atoms in the α-Si during the crystallization at 500°C. However, phosphorus atoms are poorly activated because of the suppressed Ni-MIC rate in n-type α-Si. Finally, p/n and n/p junction diodes are demonstrated on single crystalline Si substrates by the low temperature dopant activation technique promising for high performance TFTs as well as transistors with an elevated S/D.

Original language	English
Pages (from-to)	995-997
Number of pages	3
Journal	Current Applied Physics
Volume	12
Issue number	3
DOIs	https://doi.org/10.1016/j.cap.2012.01.002
Publication status	Published - 2012 May
Externally published	Yes

Keywords

Crystallization
MIDA
One-step MIC

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2012.01.002

Cite this

@article{dad27b1eb6364cd5ac914e0f348a98ee,

title = "Dopant-dependence of one-step metal-induced dopant activation process in silicon",

abstract = "We investigate dopant-dependence of low temperature dopant activation technique in α-Si featuring one-step metal-induced crystallization (MIC) to decrease resistivity of p and n Si films by forming Ni xSi y. Ni not only crystallizes p-type α-Si film but also facilitates activation of boron atoms in the α-Si during the crystallization at 500°C. However, phosphorus atoms are poorly activated because of the suppressed Ni-MIC rate in n-type α-Si. Finally, p/n and n/p junction diodes are demonstrated on single crystalline Si substrates by the low temperature dopant activation technique promising for high performance TFTs as well as transistors with an elevated S/D.",

keywords = "Crystallization, MIDA, One-step MIC",

author = "Park, {Jin Hong} and Jung, {Woo Shik} and Yu, {Hyun Yong}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea Grant funded by the Korean Government ( NRF-2011-332-0007997 ). The SIMS analysis was done by Evans Analytical Group {\textregistered} (EAG). ",

year = "2012",

month = may,

doi = "10.1016/j.cap.2012.01.002",

language = "English",

volume = "12",

pages = "995--997",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Dopant-dependence of one-step metal-induced dopant activation process in silicon

AU - Park, Jin Hong

AU - Jung, Woo Shik

AU - Yu, Hyun Yong

N1 - Funding Information: This work was supported by the National Research Foundation of Korea Grant funded by the Korean Government ( NRF-2011-332-0007997 ). The SIMS analysis was done by Evans Analytical Group ® (EAG).

PY - 2012/5

Y1 - 2012/5

N2 - We investigate dopant-dependence of low temperature dopant activation technique in α-Si featuring one-step metal-induced crystallization (MIC) to decrease resistivity of p and n Si films by forming Ni xSi y. Ni not only crystallizes p-type α-Si film but also facilitates activation of boron atoms in the α-Si during the crystallization at 500°C. However, phosphorus atoms are poorly activated because of the suppressed Ni-MIC rate in n-type α-Si. Finally, p/n and n/p junction diodes are demonstrated on single crystalline Si substrates by the low temperature dopant activation technique promising for high performance TFTs as well as transistors with an elevated S/D.

AB - We investigate dopant-dependence of low temperature dopant activation technique in α-Si featuring one-step metal-induced crystallization (MIC) to decrease resistivity of p and n Si films by forming Ni xSi y. Ni not only crystallizes p-type α-Si film but also facilitates activation of boron atoms in the α-Si during the crystallization at 500°C. However, phosphorus atoms are poorly activated because of the suppressed Ni-MIC rate in n-type α-Si. Finally, p/n and n/p junction diodes are demonstrated on single crystalline Si substrates by the low temperature dopant activation technique promising for high performance TFTs as well as transistors with an elevated S/D.

KW - Crystallization

KW - MIDA

KW - One-step MIC

UR - http://www.scopus.com/inward/record.url?scp=84862814792&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2012.01.002

DO - 10.1016/j.cap.2012.01.002

M3 - Article

AN - SCOPUS:84862814792

SN - 1567-1739

VL - 12

SP - 995

EP - 997

JO - Current Applied Physics

JF - Current Applied Physics

IS - 3

ER -

Dopant-dependence of one-step metal-induced dopant activation process in silicon

Abstract

Keywords

ASJC Scopus subject areas

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