Dopant profile model in a shallow germanium n+/p junction

Jung Woo Baek, Jaewoo Shim, Jin Hong Park, Woo Shik Jung, Hyun Yong Yu

Research output: Contribution to journalLetterpeer-review


A challenging issue is to estimate the n-type dopant profiles and, consequently, their diffusivities in shallow Ge n+/p junctions because of their abnormal dopant profiles that do not follow conventional Gaussian-distribution-based diffusion theory. In order to fit the abnormal dopant profiles in shallow junctions, what are due to (1) fast and asymmetric diffusion of n-type dopants and (2) dopant pileup caused by surface back-scattering phenomenon, we propose a new profiling function and verify it by using a fitting algorithm based on the least-squares method. Through this fitting algorithm, we estimate the diffusivity and peak-position values from the raw dopant profile data, and we provide the experimental diffusivity equations as a function of the annealing temperature.

Original languageEnglish
Pages (from-to)1855-1858
Number of pages4
JournalJournal of the Korean Physical Society
Issue number10
Publication statusPublished - 2013

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (NRF-2011-0007997).


  • Dopant profile
  • Germanium n/p
  • Shallow junction

ASJC Scopus subject areas

  • General Physics and Astronomy


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