Doping effects of lead on CdZnTe crystals

Jong Hee Suh, Sin Hang Cho, Jae Ho Won, Jin Ki Hong, Sun Ung Kim, Ki Hyun Kim, Hyunsuk Kim, Sang Sig Kim

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


CdZnTe crystals doped with lead (Pb) in the concentration range of 10 16 - 1019 cm-3 have been grown by the vertical Bridgman method. The structural quality and uniformity of the crystals were verified by chemical determination of etch-pit density and by X-ray rocking curves. Inductively coupled plasma-mass spectroscopy (ICP-MS) was employed for evaluating the dopant concentration and foreign impurities. The electrical properties of CdZnTe crystals were studied by Hall and I-V measurements. These results suggest n-type conductivity and the presence of a compensation mechanism due to the Pb dopant incorporation. It was found that the Pb-doped CdZnTe crystals had resistivity values in the range 109 - 1011 Ω·cm and showed higher dark-current stability.

Original languageEnglish
Pages (from-to)S750-S754
JournalJournal of the Korean Physical Society
Issue numberSUPPL. 3
Publication statusPublished - 2006 Dec


  • CdZnTe
  • Compensation
  • Heavy metal doping
  • High resistivity
  • Ii-VI semiconductor
  • X-ray detector

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Doping effects of lead on CdZnTe crystals'. Together they form a unique fingerprint.

Cite this