Doping effects of lead on CdZnTe crystals

Jong Hee Suh; Sin Hang Cho; Jae Ho Won; Jin Ki Hong; Sun Ung Kim; Ki Hyun Kim; Hyunsuk Kim; Sang Sig Kim

Doping effects of lead on CdZnTe crystals

Jong Hee Suh, Sin Hang Cho, Jae Ho Won, Jin Ki Hong, Sun Ung Kim, Ki Hyun Kim, Hyunsuk Kim, Sang Sig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

CdZnTe crystals doped with lead (Pb) in the concentration range of 10 ¹⁶ - 10¹⁹ cm^-3 have been grown by the vertical Bridgman method. The structural quality and uniformity of the crystals were verified by chemical determination of etch-pit density and by X-ray rocking curves. Inductively coupled plasma-mass spectroscopy (ICP-MS) was employed for evaluating the dopant concentration and foreign impurities. The electrical properties of CdZnTe crystals were studied by Hall and I-V measurements. These results suggest n-type conductivity and the presence of a compensation mechanism due to the Pb dopant incorporation. It was found that the Pb-doped CdZnTe crystals had resistivity values in the range 10⁹ - 10¹¹ Ω·cm and showed higher dark-current stability.

Original language	English
Pages (from-to)	S750-S754
Journal	Journal of the Korean Physical Society
Volume	49
Issue number	SUPPL. 3
Publication status	Published - 2006 Dec

Keywords

CdZnTe
Compensation
Heavy metal doping
High resistivity
Ii-VI semiconductor
X-ray detector

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

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title = "Doping effects of lead on CdZnTe crystals",

abstract = "CdZnTe crystals doped with lead (Pb) in the concentration range of 10 16 - 1019 cm-3 have been grown by the vertical Bridgman method. The structural quality and uniformity of the crystals were verified by chemical determination of etch-pit density and by X-ray rocking curves. Inductively coupled plasma-mass spectroscopy (ICP-MS) was employed for evaluating the dopant concentration and foreign impurities. The electrical properties of CdZnTe crystals were studied by Hall and I-V measurements. These results suggest n-type conductivity and the presence of a compensation mechanism due to the Pb dopant incorporation. It was found that the Pb-doped CdZnTe crystals had resistivity values in the range 109 - 1011 Ω·cm and showed higher dark-current stability.",

keywords = "CdZnTe, Compensation, Heavy metal doping, High resistivity, Ii-VI semiconductor, X-ray detector",

author = "Suh, {Jong Hee} and Cho, {Sin Hang} and Won, {Jae Ho} and Hong, {Jin Ki} and Kim, {Sun Ung} and Kim, {Ki Hyun} and Hyunsuk Kim and Kim, {Sang Sig}",

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TY - JOUR

T1 - Doping effects of lead on CdZnTe crystals

AU - Suh, Jong Hee

AU - Cho, Sin Hang

AU - Won, Jae Ho

AU - Hong, Jin Ki

AU - Kim, Sun Ung

AU - Kim, Ki Hyun

AU - Kim, Hyunsuk

AU - Kim, Sang Sig

PY - 2006/12

Y1 - 2006/12

N2 - CdZnTe crystals doped with lead (Pb) in the concentration range of 10 16 - 1019 cm-3 have been grown by the vertical Bridgman method. The structural quality and uniformity of the crystals were verified by chemical determination of etch-pit density and by X-ray rocking curves. Inductively coupled plasma-mass spectroscopy (ICP-MS) was employed for evaluating the dopant concentration and foreign impurities. The electrical properties of CdZnTe crystals were studied by Hall and I-V measurements. These results suggest n-type conductivity and the presence of a compensation mechanism due to the Pb dopant incorporation. It was found that the Pb-doped CdZnTe crystals had resistivity values in the range 109 - 1011 Ω·cm and showed higher dark-current stability.

AB - CdZnTe crystals doped with lead (Pb) in the concentration range of 10 16 - 1019 cm-3 have been grown by the vertical Bridgman method. The structural quality and uniformity of the crystals were verified by chemical determination of etch-pit density and by X-ray rocking curves. Inductively coupled plasma-mass spectroscopy (ICP-MS) was employed for evaluating the dopant concentration and foreign impurities. The electrical properties of CdZnTe crystals were studied by Hall and I-V measurements. These results suggest n-type conductivity and the presence of a compensation mechanism due to the Pb dopant incorporation. It was found that the Pb-doped CdZnTe crystals had resistivity values in the range 109 - 1011 Ω·cm and showed higher dark-current stability.

KW - CdZnTe

KW - Compensation

KW - Heavy metal doping

KW - High resistivity

KW - Ii-VI semiconductor

KW - X-ray detector

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M3 - Article

AN - SCOPUS:33846358526

SN - 0374-4884

VL - 49

SP - S750-S754

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL. 3

ER -

Doping effects of lead on CdZnTe crystals

Abstract

Keywords

ASJC Scopus subject areas

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