Doping effects of lead on CdZnTe crystals

Jong Hee Suh; Sin Hang Cho; Jae Ho Won; Jin Ki Hong; Sun Ung Kim; Ki Hyun Kim; Hyunsuk Kim; Sang Sig Kim

Doping effects of lead on CdZnTe crystals

Jong Hee Suh^*
, Sin Hang Cho
, Jae Ho Won
, Jin Ki Hong
, Sun Ung Kim
, Ki Hyun Kim
, Hyunsuk Kim
, Sang Sig Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

CdZnTe crystals doped with lead (Pb) in the concentration range of 10 ¹⁶ - 10¹⁹ cm^-3 have been grown by the vertical Bridgman method. The structural quality and uniformity of the crystals were verified by chemical determination of etch-pit density and by X-ray rocking curves. Inductively coupled plasma-mass spectroscopy (ICP-MS) was employed for evaluating the dopant concentration and foreign impurities. The electrical properties of CdZnTe crystals were studied by Hall and I-V measurements. These results suggest n-type conductivity and the presence of a compensation mechanism due to the Pb dopant incorporation. It was found that the Pb-doped CdZnTe crystals had resistivity values in the range 10⁹ - 10¹¹ Ω·cm and showed higher dark-current stability.

Original language	English
Pages (from-to)	S750-S754
Journal	Journal of the Korean Physical Society
Volume	49
Issue number	SUPPL. 3
Publication status	Published - 2006 Dec

Keywords

CdZnTe
Compensation
Heavy metal doping
High resistivity
Ii-VI semiconductor
X-ray detector

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

@article{7787555542a840a6bd114d9c7c107b5a,

title = "Doping effects of lead on CdZnTe crystals",

abstract = "CdZnTe crystals doped with lead (Pb) in the concentration range of 10 16 - 1019 cm-3 have been grown by the vertical Bridgman method. The structural quality and uniformity of the crystals were verified by chemical determination of etch-pit density and by X-ray rocking curves. Inductively coupled plasma-mass spectroscopy (ICP-MS) was employed for evaluating the dopant concentration and foreign impurities. The electrical properties of CdZnTe crystals were studied by Hall and I-V measurements. These results suggest n-type conductivity and the presence of a compensation mechanism due to the Pb dopant incorporation. It was found that the Pb-doped CdZnTe crystals had resistivity values in the range 109 - 1011 Ω·cm and showed higher dark-current stability.",

keywords = "CdZnTe, Compensation, Heavy metal doping, High resistivity, Ii-VI semiconductor, X-ray detector",

author = "Suh, \{Jong Hee\} and Cho, \{Sin Hang\} and Won, \{Jae Ho\} and Hong, \{Jin Ki\} and Kim, \{Sun Ung\} and Kim, \{Ki Hyun\} and Hyunsuk Kim and Kim, \{Sang Sig\}",

year = "2006",

month = dec,

language = "English",

volume = "49",

pages = "S750--S754",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SUPPL. 3",

}

TY - JOUR

T1 - Doping effects of lead on CdZnTe crystals

AU - Suh, Jong Hee

AU - Cho, Sin Hang

AU - Won, Jae Ho

AU - Hong, Jin Ki

AU - Kim, Sun Ung

AU - Kim, Ki Hyun

AU - Kim, Hyunsuk

AU - Kim, Sang Sig

PY - 2006/12

Y1 - 2006/12

N2 - CdZnTe crystals doped with lead (Pb) in the concentration range of 10 16 - 1019 cm-3 have been grown by the vertical Bridgman method. The structural quality and uniformity of the crystals were verified by chemical determination of etch-pit density and by X-ray rocking curves. Inductively coupled plasma-mass spectroscopy (ICP-MS) was employed for evaluating the dopant concentration and foreign impurities. The electrical properties of CdZnTe crystals were studied by Hall and I-V measurements. These results suggest n-type conductivity and the presence of a compensation mechanism due to the Pb dopant incorporation. It was found that the Pb-doped CdZnTe crystals had resistivity values in the range 109 - 1011 Ω·cm and showed higher dark-current stability.

AB - CdZnTe crystals doped with lead (Pb) in the concentration range of 10 16 - 1019 cm-3 have been grown by the vertical Bridgman method. The structural quality and uniformity of the crystals were verified by chemical determination of etch-pit density and by X-ray rocking curves. Inductively coupled plasma-mass spectroscopy (ICP-MS) was employed for evaluating the dopant concentration and foreign impurities. The electrical properties of CdZnTe crystals were studied by Hall and I-V measurements. These results suggest n-type conductivity and the presence of a compensation mechanism due to the Pb dopant incorporation. It was found that the Pb-doped CdZnTe crystals had resistivity values in the range 109 - 1011 Ω·cm and showed higher dark-current stability.

KW - CdZnTe

KW - Compensation

KW - Heavy metal doping

KW - High resistivity

KW - Ii-VI semiconductor

KW - X-ray detector

UR - https://www.scopus.com/pages/publications/33846358526

M3 - Article

AN - SCOPUS:33846358526

SN - 0374-4884

VL - 49

SP - S750-S754

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL. 3

ER -

Doping effects of lead on CdZnTe crystals

Abstract

Keywords

ASJC Scopus subject areas

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