Doping-Induced Performance Improvement in ReS₂ Field Effect Transistors: Exploring a Heterostructure with In₂O₃ Quantum Dots

Rhenium disulfide (ReS₂) is a type of transition metal dichalcogenides (TMDs) that has potential electronic and photoelectrical applications. However, limited research has been conducted on improving its electrical properties and understanding the effect of doping on ReS₂-based devices. In this study, the enhanced electrical and photoelectrical performance of a 2D/0D heterostructure constructed by decorating the In₂O₃ quantum dots (QDs) on a multilayer ReS₂ field-effect transistor (FET) is reported. The In₂O₃ QDs are characterized by using a transmission electron microscope, optical absorption, and photoluminescence spectroscopy. The n-doping effects with improved mobility are clearly observed, which is attributed to the electron transfer induced by the relatively high conduction band level of In₂O₃ QDs. Owing to the channel migration of ReS₂ and traps at the ReS₂/In₂O₃ QDs interface, additional performance improvements are observed, including reduced contact resistance, improved subthreshold swing, and increased photoresponsivity; however, the photoresponse speed is decreased. In summary, the findings suggest a novel mixed-dimensional heterostructure for enhancing the performance of ReS₂ transistors and provide insights into doping-induced channel migration for 2D materials.