Abstract
In this letter, we investigate the impact of periphery, width, length and area on the external quantum efficiency (EQE) of stripe-type InGaN-based red micro-light-emitting diodes (µLEDs). A longer periphery resulted in a higher light extraction efficiency ( η e ) via the sidewall regardless of the area of the µLEDs. However, as the injection current increased a somewhat larger efficiency droop was observed at the longer periphery due to current crowding. Additionally, larger µLEDs experienced more self-heating than smaller ones, resulting in a red shift of wavelengths and a larger efficiency droop. When the current density exceeded 100 A cm−2, the EQE ratio of smaller-area μLEDs to larger-area ones increased significantly due to the difference in efficiency droop. Besides, a short light propagation length and a long emission width yielded a higher η e . Hence, the periphery, width, length and area of the µLEDs determine EQE, which provides insight into the pixel design of µLED displays.
Original language | English |
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Article number | 01LT01 |
Journal | Semiconductor Science and Technology |
Volume | 1 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2024 Jan |
Bibliographical note
Publisher Copyright:© 2023 IOP Publishing Ltd.
Keywords
- InGaN red
- efficiency droop
- external quantum efficiency
- light extraction efficiency
- micro-LEDs
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry