We report dual-color production of the blue and green regions using hybrid nitride/ZnO light emitting diode (LED) structures grown on ZnO substrates. The blue emission is ascribed to the near-band edge transition in InGaN while green emission is related to Zn-related defect levels formed by the unintentional interdiffusion of Zn into the InGaN active layer from the ZnO substrates.
|Journal||Applied Physics Express|
|Publication status||Published - 2010 Feb|
ASJC Scopus subject areas
- Physics and Astronomy(all)