Abstract
We report dual-color production of the blue and green regions using hybrid nitride/ZnO light emitting diode (LED) structures grown on ZnO substrates. The blue emission is ascribed to the near-band edge transition in InGaN while green emission is related to Zn-related defect levels formed by the unintentional interdiffusion of Zn into the InGaN active layer from the ZnO substrates.
Original language | English |
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Article number | 022101 |
Journal | Applied Physics Express |
Volume | 3 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2010 Feb |
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy