Dual-color emission in hybrid III-nitride/ZnO light emitting diodes

Gon Namkoong; Elaissa Trybus; Maurice C. Cheung; W. Alan Doolittle; Alexander N. Cartwright; Ian Ferguson; Tae Yeon Seong; Jeff Nause

doi:10.1143/APEX.3.022101

Dual-color emission in hybrid III-nitride/ZnO light emitting diodes

Gon Namkoong, Elaissa Trybus, Maurice C. Cheung, W. Alan Doolittle, Alexander N. Cartwright, Ian Ferguson, Tae Yeon Seong, Jeff Nause

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report dual-color production of the blue and green regions using hybrid nitride/ZnO light emitting diode (LED) structures grown on ZnO substrates. The blue emission is ascribed to the near-band edge transition in InGaN while green emission is related to Zn-related defect levels formed by the unintentional interdiffusion of Zn into the InGaN active layer from the ZnO substrates.

Original language	English
Article number	022101
Journal	Applied Physics Express
Volume	3
Issue number	2
DOIs	https://doi.org/10.1143/APEX.3.022101
Publication status	Published - 2010 Feb

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/APEX.3.022101

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title = "Dual-color emission in hybrid III-nitride/ZnO light emitting diodes",

abstract = "We report dual-color production of the blue and green regions using hybrid nitride/ZnO light emitting diode (LED) structures grown on ZnO substrates. The blue emission is ascribed to the near-band edge transition in InGaN while green emission is related to Zn-related defect levels formed by the unintentional interdiffusion of Zn into the InGaN active layer from the ZnO substrates.",

author = "Gon Namkoong and Elaissa Trybus and Cheung, {Maurice C.} and Doolittle, {W. Alan} and Cartwright, {Alexander N.} and Ian Ferguson and Seong, {Tae Yeon} and Jeff Nause",

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doi = "10.1143/APEX.3.022101",

language = "English",

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AU - Namkoong, Gon

AU - Trybus, Elaissa

AU - Cheung, Maurice C.

AU - Doolittle, W. Alan

AU - Cartwright, Alexander N.

AU - Ferguson, Ian

AU - Seong, Tae Yeon

AU - Nause, Jeff

PY - 2010/2

Y1 - 2010/2

N2 - We report dual-color production of the blue and green regions using hybrid nitride/ZnO light emitting diode (LED) structures grown on ZnO substrates. The blue emission is ascribed to the near-band edge transition in InGaN while green emission is related to Zn-related defect levels formed by the unintentional interdiffusion of Zn into the InGaN active layer from the ZnO substrates.

AB - We report dual-color production of the blue and green regions using hybrid nitride/ZnO light emitting diode (LED) structures grown on ZnO substrates. The blue emission is ascribed to the near-band edge transition in InGaN while green emission is related to Zn-related defect levels formed by the unintentional interdiffusion of Zn into the InGaN active layer from the ZnO substrates.

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U2 - 10.1143/APEX.3.022101

DO - 10.1143/APEX.3.022101

M3 - Article

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SN - 1882-0778

VL - 3

JO - Applied Physics Express

JF - Applied Physics Express

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ER -

Dual-color emission in hybrid III-nitride/ZnO light emitting diodes

Abstract

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