Dual-field plated β-Ga2O3 nano-FETs with an off-state breakdown voltage exceeding 400 v

Jinho Bae, Hyoung Woo Kim, In Ho Kang, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


The nature of ultra-wide energy bandgap (UWBG) semiconductors enables transistors to withstand large voltage swings, ensuring stable high-power and high-efficiency operation. The potential of UWBG β-Ga2O3 nano-field effect transistors (nano-FETs) has not been fully explored due to premature avalanche breakdown in these devices, despite their extremely high critical breakdown field. An exfoliated β-Ga2O3 nano-layer was fabricated into a depletion-mode nano-FET integrated with dual field-modulating layers to redistribute the electric field crowded around the drain edge of the gate electrode. A stepped-gate field-plate and a source-grounded field-modulating electrode were integrated into the planar β-Ga2O3 nano-FETs. Excellent output and transfer characteristics were demonstrated, i.e. a low subthreshold swing (95.0 mV dec-1) and high on/off ratio (∼1010), achieving an ultra-high off-state three-terminal breakdown voltage of 412 V. The experimental results were compared with numerical simulations, confirming the efficacy of the dual-field plate structure. The introduction of multiple field-modulating plates into the UWBG β-Ga2O3 nano-FETs greatly increased the voltage swings to over 400 V, suggesting the possibility for small footprint power electronics.

Original languageEnglish
Pages (from-to)2687-2692
Number of pages6
JournalJournal of Materials Chemistry C
Issue number8
Publication statusPublished - 2020 Feb 28

Bibliographical note

Funding Information:
The research at Korea University was supported by the National Research Foundation of Korea (2018R1D1A1A09083917) and the Korea Institute of Energy Technology Evaluation and Planning (KETEP) (20172010104830). The research at KERI was supported by the KERI Primary research program of MIST/NST (No. 20-12-N0101-12).

ASJC Scopus subject areas

  • General Chemistry
  • Materials Chemistry


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