Abstract
This paper proposes to use machine learning (ML) methods to predict wafer quality using Fab inline measured items, DC measurements, and DVS (Dynamic Voltage Stress) at wafer sort. With developed ML approach, the predicted accuracy is more than 80% in 8 nm products used in this study. We believe this method can be further fine-tuned to help enable ICs at the high level expected for automotive systems. By assigning predictive rankings, the method also helps enable best tooling system for higher quality.
Original language | English |
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Title of host publication | 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781728131993 |
DOIs | |
Publication status | Published - 2020 Apr |
Event | 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Virtual, Online, United States Duration: 2020 Apr 28 → 2020 May 30 |
Publication series
Name | IEEE International Reliability Physics Symposium Proceedings |
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Volume | 2020-April |
ISSN (Print) | 1541-7026 |
Conference
Conference | 2020 IEEE International Reliability Physics Symposium, IRPS 2020 |
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Country/Territory | United States |
City | Virtual, Online |
Period | 20/4/28 → 20/5/30 |
Bibliographical note
Publisher Copyright:© 2020 IEEE.
Keywords
- Gradient Boosting
- Machine Learning
- Mice
- Risk Prediction
ASJC Scopus subject areas
- General Engineering