EBIC investigations of defect distribution in ELOG GaN films

E. B. Yakimov; P. S. Vergeles; A. V. Govorkov; A. Y. Polyakov; N. B. Smirnov; In Hwan Lee; Cheul Ro Lee; S. J. Pearton

doi:10.1016/j.physb.2009.08.215

EBIC investigations of defect distribution in ELOG GaN films

E. B. Yakimov, P. S. Vergeles, A. V. Govorkov, A. Y. Polyakov, N. B. Smirnov, In Hwan Lee, Cheul Ro Lee, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The possibilities of the Electron Beam Induced Current (EBIC) method for the characterization of epitaxial lateral overgrowth (ELOG) GaN structures are demonstrated. The diffusion length and local donor concentrations in the structures studied are obtained by fitting the dependence of collected current in the EBIC mode on accelerating voltage with calculated one. It is shown that the local donor concentrations in the regions of lateral overgrowth measured by the EBIC are about three times lower than that in the vertically grown regions. This difference is observed in the structures with the donor concentration varying in the range from 10¹⁵ to 10¹⁷ cm^-3. These results could be ascribed to the anisotropy of Si incorporation efficiency during growth. A comparison of the EBIC results with the results of capacitance-voltage (C-V) profiling allows us to estimate the precision of EBIC dopant concentration measurements.

Original language	English
Pages (from-to)	4916-4918
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	404
Issue number	23-24
DOIs	https://doi.org/10.1016/j.physb.2009.08.215
Publication status	Published - 2009 Dec 15
Externally published	Yes

Bibliographical note

Funding Information:
The work was supported in part by a grant from Russian Foundation for Basic Research (RFBR Grants 08-02-00058) and by the Program of basic researches of RAS No. 27 “The fundamentals of basic researches of nanotechnologies and nanomaterials”.

Keywords

EBIC
ELOG
GaN
Local dopant concentration

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2009.08.215

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title = "EBIC investigations of defect distribution in ELOG GaN films",

abstract = "The possibilities of the Electron Beam Induced Current (EBIC) method for the characterization of epitaxial lateral overgrowth (ELOG) GaN structures are demonstrated. The diffusion length and local donor concentrations in the structures studied are obtained by fitting the dependence of collected current in the EBIC mode on accelerating voltage with calculated one. It is shown that the local donor concentrations in the regions of lateral overgrowth measured by the EBIC are about three times lower than that in the vertically grown regions. This difference is observed in the structures with the donor concentration varying in the range from 1015 to 1017 cm-3. These results could be ascribed to the anisotropy of Si incorporation efficiency during growth. A comparison of the EBIC results with the results of capacitance-voltage (C-V) profiling allows us to estimate the precision of EBIC dopant concentration measurements.",

keywords = "EBIC, ELOG, GaN, Local dopant concentration",

author = "Yakimov, {E. B.} and Vergeles, {P. S.} and Govorkov, {A. V.} and Polyakov, {A. Y.} and Smirnov, {N. B.} and Lee, {In Hwan} and Lee, {Cheul Ro} and Pearton, {S. J.}",

note = "Funding Information: The work was supported in part by a grant from Russian Foundation for Basic Research (RFBR Grants 08-02-00058) and by the Program of basic researches of RAS No. 27 “The fundamentals of basic researches of nanotechnologies and nanomaterials”.",

year = "2009",

month = dec,

day = "15",

doi = "10.1016/j.physb.2009.08.215",

language = "English",

volume = "404",

pages = "4916--4918",

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AU - Yakimov, E. B.

AU - Vergeles, P. S.

AU - Govorkov, A. V.

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Lee, In Hwan

AU - Lee, Cheul Ro

AU - Pearton, S. J.

N1 - Funding Information: The work was supported in part by a grant from Russian Foundation for Basic Research (RFBR Grants 08-02-00058) and by the Program of basic researches of RAS No. 27 “The fundamentals of basic researches of nanotechnologies and nanomaterials”.

PY - 2009/12/15

Y1 - 2009/12/15

N2 - The possibilities of the Electron Beam Induced Current (EBIC) method for the characterization of epitaxial lateral overgrowth (ELOG) GaN structures are demonstrated. The diffusion length and local donor concentrations in the structures studied are obtained by fitting the dependence of collected current in the EBIC mode on accelerating voltage with calculated one. It is shown that the local donor concentrations in the regions of lateral overgrowth measured by the EBIC are about three times lower than that in the vertically grown regions. This difference is observed in the structures with the donor concentration varying in the range from 1015 to 1017 cm-3. These results could be ascribed to the anisotropy of Si incorporation efficiency during growth. A comparison of the EBIC results with the results of capacitance-voltage (C-V) profiling allows us to estimate the precision of EBIC dopant concentration measurements.

AB - The possibilities of the Electron Beam Induced Current (EBIC) method for the characterization of epitaxial lateral overgrowth (ELOG) GaN structures are demonstrated. The diffusion length and local donor concentrations in the structures studied are obtained by fitting the dependence of collected current in the EBIC mode on accelerating voltage with calculated one. It is shown that the local donor concentrations in the regions of lateral overgrowth measured by the EBIC are about three times lower than that in the vertically grown regions. This difference is observed in the structures with the donor concentration varying in the range from 1015 to 1017 cm-3. These results could be ascribed to the anisotropy of Si incorporation efficiency during growth. A comparison of the EBIC results with the results of capacitance-voltage (C-V) profiling allows us to estimate the precision of EBIC dopant concentration measurements.

KW - EBIC

KW - ELOG

KW - GaN

KW - Local dopant concentration

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EBIC investigations of defect distribution in ELOG GaN films

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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