EBIC investigations of defect distribution in ELOG GaN films

E. B. Yakimov, P. S. Vergeles, A. V. Govorkov, A. Y. Polyakov, N. B. Smirnov, In Hwan Lee, Cheul Ro Lee, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


The possibilities of the Electron Beam Induced Current (EBIC) method for the characterization of epitaxial lateral overgrowth (ELOG) GaN structures are demonstrated. The diffusion length and local donor concentrations in the structures studied are obtained by fitting the dependence of collected current in the EBIC mode on accelerating voltage with calculated one. It is shown that the local donor concentrations in the regions of lateral overgrowth measured by the EBIC are about three times lower than that in the vertically grown regions. This difference is observed in the structures with the donor concentration varying in the range from 1015 to 1017 cm-3. These results could be ascribed to the anisotropy of Si incorporation efficiency during growth. A comparison of the EBIC results with the results of capacitance-voltage (C-V) profiling allows us to estimate the precision of EBIC dopant concentration measurements.

Original languageEnglish
Pages (from-to)4916-4918
Number of pages3
JournalPhysica B: Condensed Matter
Issue number23-24
Publication statusPublished - 2009 Dec 15
Externally publishedYes

Bibliographical note

Funding Information:
The work was supported in part by a grant from Russian Foundation for Basic Research (RFBR Grants 08-02-00058) and by the Program of basic researches of RAS No. 27 “The fundamentals of basic researches of nanotechnologies and nanomaterials”.


  • EBIC
  • ELOG
  • GaN
  • Local dopant concentration

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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