Edge termination for optimized silicon carbide MOSFET breakdown voltage

Sola Woo; Jongmin Geum; Sinsu Kyoung; Man Young Sung

doi:10.1166/jno.2016.1989

Edge termination for optimized silicon carbide MOSFET breakdown voltage

Sola Woo, Jongmin Geum, Sinsu Kyoung, Man Young Sung

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, a 1200-V silicon carbide (SiC) MOSFET field ring was designed to disperse the electric field of an edge region. The field ring structure normally used for silicon (Si) edge termination was applied to SiC, and the same electric field dispersion effect that is seen when using a Si field ring was observed. In order to optimize the breakdown voltage, three design parameters were varied the spacing between the buffer and the field ring, the number of field rings, and the spacing between the field rings. The input parameters used in this paper are the optimized field ring length, depth, and concentration. Using these three parameters, the 1200-V SiC MOSFET edge termination was designed and optimized.

Original language	English
Pages (from-to)	585-588
Number of pages	4
Journal	Journal of Nanoelectronics and Optoelectronics
Volume	11
Issue number	5
DOIs	https://doi.org/10.1166/jno.2016.1989
Publication status	Published - 2016

Keywords

Edge termination
Field ring
Silicon carbide mosfet

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1166/jno.2016.1989

Cite this

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title = "Edge termination for optimized silicon carbide MOSFET breakdown voltage",

abstract = "In this paper, a 1200-V silicon carbide (SiC) MOSFET field ring was designed to disperse the electric field of an edge region. The field ring structure normally used for silicon (Si) edge termination was applied to SiC, and the same electric field dispersion effect that is seen when using a Si field ring was observed. In order to optimize the breakdown voltage, three design parameters were varied the spacing between the buffer and the field ring, the number of field rings, and the spacing between the field rings. The input parameters used in this paper are the optimized field ring length, depth, and concentration. Using these three parameters, the 1200-V SiC MOSFET edge termination was designed and optimized.",

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TY - JOUR

T1 - Edge termination for optimized silicon carbide MOSFET breakdown voltage

AU - Woo, Sola

AU - Geum, Jongmin

AU - Kyoung, Sinsu

AU - Sung, Man Young

PY - 2016

Y1 - 2016

N2 - In this paper, a 1200-V silicon carbide (SiC) MOSFET field ring was designed to disperse the electric field of an edge region. The field ring structure normally used for silicon (Si) edge termination was applied to SiC, and the same electric field dispersion effect that is seen when using a Si field ring was observed. In order to optimize the breakdown voltage, three design parameters were varied the spacing between the buffer and the field ring, the number of field rings, and the spacing between the field rings. The input parameters used in this paper are the optimized field ring length, depth, and concentration. Using these three parameters, the 1200-V SiC MOSFET edge termination was designed and optimized.

AB - In this paper, a 1200-V silicon carbide (SiC) MOSFET field ring was designed to disperse the electric field of an edge region. The field ring structure normally used for silicon (Si) edge termination was applied to SiC, and the same electric field dispersion effect that is seen when using a Si field ring was observed. In order to optimize the breakdown voltage, three design parameters were varied the spacing between the buffer and the field ring, the number of field rings, and the spacing between the field rings. The input parameters used in this paper are the optimized field ring length, depth, and concentration. Using these three parameters, the 1200-V SiC MOSFET edge termination was designed and optimized.

KW - Edge termination

KW - Field ring

KW - Silicon carbide mosfet

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Edge termination for optimized silicon carbide MOSFET breakdown voltage

Abstract

Keywords

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