Editors’ Choice—Structural, Electrical, and Luminescent Properties of Orthorhombic κ-Ga2O3 Grown by Epitaxial Lateral Overgrowth

V. I. Nikolaev, A. Y. Polyakov, A. V. Myasoedov, I. S. Pavlov, A. V. Morozov, A. I. Pechnikov, In Hwan Lee, E. B. Yakimov, A. A. Vasilev, M. P. Scheglov, A. I. Kochkova, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

Abstract

The properties of orthorhombic κ-Ga2O3 films grown by Epitaxial Lateral Overgrowth (ELOG) were studied by Scanning Transmission Electron Microscopy (STEM), X-ray diffraction, capacitance-voltage profiling, Microcathodoluminescence (MCL) spectroscopy and imaging. ELOG mask was formed by deposition of SiO2 stripes on TiO2 buffer prepared on basal plane sapphire, with the stripes going along the [11 2 ̅ 0] direction of sapphire. κ-Ga2O3 ELOG growth was performed using Halide Vapor Phase Epitaxy (HVPE), with ELOG wing of the structure formed by lateral overgrowth over the 20 μm-wide SiO2 stripes, while growth in between the stripes proceeded initially by vertical growth in the 5-μm-wide windows. TEM analysis showed that the material in the windows comprised 120o rotational nanodomains typical of κ-Ga2O3, while, in the wing regions, the material was single-domain monocrystalline. The films were conducting, with the net donor density close to 1013 cm−3. The data suggested the material in the windows have much higher resistance than in the wings. MCL spectra and imaging revealed much higher density of nonradiative recombination centers in the windows than in the wings.

Original languageEnglish
Article number115001
JournalECS Journal of Solid State Science and Technology
Volume12
Issue number11
DOIs
Publication statusPublished - 2023 Nov

Bibliographical note

Publisher Copyright:
© 2023 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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