Abstract
This study examined the effect of the hydrogen ratio on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt% ZnO, 2 wt% Al2O3). Various AZO films on glass were prepared by changing the H2/(Ar+H2) ratio at room temperature. The AZO/H films showed a lower resistivity and a higher carrier concentration and mobility than the AZO films. However, the resistivity and mobility of the AZO/H films increased and decreased with increasing H2 flow ratio, respectively. As a result, the AZO/H films grown with 2% H2 addition showed excellent electrical properties with a resistivity of 4.98×10 4 Ωcm. The UV-measurements showed that the optical transmission of the AZO/H films was >85% in the visible range with a wide optical band gap. In addition, the effect of H2 flow ratio on the structure and composition of hydrogenated AZO thin films have also been studied.
Original language | English |
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Pages (from-to) | 548-553 |
Number of pages | 6 |
Journal | Journal of Electroceramics |
Volume | 23 |
Issue number | 2-4 |
DOIs | |
Publication status | Published - 2009 Oct |
Bibliographical note
Funding Information:Acknowledgement This work is outcome of the fostering project of the Best Lab supported financially by the Ministry of Commerce, Industry and Energy (MOCIE)
Keywords
- Al doping
- Hydrogenated
- Rf magnetron sputtering
- ZnO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Mechanics of Materials
- Materials Chemistry
- Electrical and Electronic Engineering