Effect of Al composition and V/III ratio of AlGaN on GaN for distributed Bragg reflector

Woo Seop Jeong; Dae sik Kim; Junsung Park; Seung Hee Cho; Cheol Kim; Dongjin Byun

doi:10.3938/jkps.71.345

Effect of Al composition and V/III ratio of AlGaN on GaN for distributed Bragg reflector

Woo Seop Jeong, Dae sik Kim, Junsung Park, Seung Hee Cho, Cheol Kim, Dongjin Byun

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this study, we have deposited the AlGaN thin films for distributdd Bragg reflector (DBR). We investigated effects of Al content (18.0% ~ 47.2%) and III/V ratio (1437 4792) on AlGaN thin film. We analyzed image of grown AlGaN epi-layer by FE-SEM. There are different growth behaviors depending on III/V ratio under the greatest Al contents. Therefore, we optimized the AlGaN epi-layer growth conditions that have the highest Al content and adjusted III/V ratio. Also, AlGaN thin films were analyzed. Finally, we fabricated DBR using optimized AlGaN epi-layer and characterized the optical properties and surface morphology.

Original language	English
Pages (from-to)	345-348
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	71
Issue number	6
DOIs	https://doi.org/10.3938/jkps.71.345
Publication status	Published - 2017 Sept 1

Keywords

AlGaN
Composition
DBR
GaN
III/V ratio

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.3938/jkps.71.345

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@article{a4bd0a4de65e4c80a75bc835a8d947b6,

title = "Effect of Al composition and V/III ratio of AlGaN on GaN for distributed Bragg reflector",

abstract = "In this study, we have deposited the AlGaN thin films for distributdd Bragg reflector (DBR). We investigated effects of Al content (18.0% ~ 47.2%) and III/V ratio (1437 4792) on AlGaN thin film. We analyzed image of grown AlGaN epi-layer by FE-SEM. There are different growth behaviors depending on III/V ratio under the greatest Al contents. Therefore, we optimized the AlGaN epi-layer growth conditions that have the highest Al content and adjusted III/V ratio. Also, AlGaN thin films were analyzed. Finally, we fabricated DBR using optimized AlGaN epi-layer and characterized the optical properties and surface morphology.",

keywords = "AlGaN, Composition, DBR, GaN, III/V ratio",

author = "Jeong, {Woo Seop} and Kim, {Dae sik} and Junsung Park and Cho, {Seung Hee} and Cheol Kim and Dongjin Byun",

note = "Funding Information: This work was supported by the Technology Innovation Program (10067492) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). Publisher Copyright: {\textcopyright} 2017, The Korean Physical Society.",

year = "2017",

month = sep,

day = "1",

doi = "10.3938/jkps.71.345",

language = "English",

volume = "71",

pages = "345--348",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

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TY - JOUR

T1 - Effect of Al composition and V/III ratio of AlGaN on GaN for distributed Bragg reflector

AU - Jeong, Woo Seop

AU - Kim, Dae sik

AU - Park, Junsung

AU - Cho, Seung Hee

AU - Kim, Cheol

AU - Byun, Dongjin

N1 - Funding Information: This work was supported by the Technology Innovation Program (10067492) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). Publisher Copyright: © 2017, The Korean Physical Society.

PY - 2017/9/1

Y1 - 2017/9/1

N2 - In this study, we have deposited the AlGaN thin films for distributdd Bragg reflector (DBR). We investigated effects of Al content (18.0% ~ 47.2%) and III/V ratio (1437 4792) on AlGaN thin film. We analyzed image of grown AlGaN epi-layer by FE-SEM. There are different growth behaviors depending on III/V ratio under the greatest Al contents. Therefore, we optimized the AlGaN epi-layer growth conditions that have the highest Al content and adjusted III/V ratio. Also, AlGaN thin films were analyzed. Finally, we fabricated DBR using optimized AlGaN epi-layer and characterized the optical properties and surface morphology.

AB - In this study, we have deposited the AlGaN thin films for distributdd Bragg reflector (DBR). We investigated effects of Al content (18.0% ~ 47.2%) and III/V ratio (1437 4792) on AlGaN thin film. We analyzed image of grown AlGaN epi-layer by FE-SEM. There are different growth behaviors depending on III/V ratio under the greatest Al contents. Therefore, we optimized the AlGaN epi-layer growth conditions that have the highest Al content and adjusted III/V ratio. Also, AlGaN thin films were analyzed. Finally, we fabricated DBR using optimized AlGaN epi-layer and characterized the optical properties and surface morphology.

KW - AlGaN

KW - Composition

KW - DBR

KW - GaN

KW - III/V ratio

UR - http://www.scopus.com/inward/record.url?scp=85029621680&partnerID=8YFLogxK

U2 - 10.3938/jkps.71.345

DO - 10.3938/jkps.71.345

M3 - Article

AN - SCOPUS:85029621680

SN - 0374-4884

VL - 71

SP - 345

EP - 348

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 6

ER -

Effect of Al composition and V/III ratio of AlGaN on GaN for distributed Bragg reflector

Abstract

Keywords

ASJC Scopus subject areas

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