Abstract
In this study, we have deposited the AlGaN thin films for distributdd Bragg reflector (DBR). We investigated effects of Al content (18.0% ~ 47.2%) and III/V ratio (1437 4792) on AlGaN thin film. We analyzed image of grown AlGaN epi-layer by FE-SEM. There are different growth behaviors depending on III/V ratio under the greatest Al contents. Therefore, we optimized the AlGaN epi-layer growth conditions that have the highest Al content and adjusted III/V ratio. Also, AlGaN thin films were analyzed. Finally, we fabricated DBR using optimized AlGaN epi-layer and characterized the optical properties and surface morphology.
Original language | English |
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Pages (from-to) | 345-348 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 71 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2017 Sept 1 |
Keywords
- AlGaN
- Composition
- DBR
- GaN
- III/V ratio
ASJC Scopus subject areas
- Physics and Astronomy(all)