Effect of annealing on the magnetic anisotropy of GaMnAs film with low Mn concentration

Sanghoon Lee, Hyehyeon Byeon, Sangyeop Lee, Taehee Yoo, X. Liu, J. K. Furdyna

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1 Citation (Scopus)


The effect of annealing on the magnetic anisotropy of a GaMnAs film with a low Mn composition of 2% has been investigated. Hall measurements have been performed with an external field applied in- and out-of-plane. In as-grown samples, the behavior of the Hall resistance indicates that the out-of-plane magnetic anisotropy dominates over the in-plane anisotropy. The vertical anisotropy, however, gradually decreased with increasing annealing temperatures and changed to in-plane dominant anisotropy in the film annealed at 300 °C. Furthermore, it was found that the direction of the uniaxial anisotropy in the domain with the in-plane easy axes, changed from the [110] direction in as-grown film to the [11̄0] direction in the annealed film. This revealed that annealing altered the magnetic anisotropy of the GaMnAs film between out-of-plane and in-plane directions as well as within the film plane.

Original languageEnglish
Pages (from-to)S34-S38
JournalCurrent Applied Physics
Issue numberSUPPL. 1
Publication statusPublished - 2014 Mar 14

Bibliographical note

Funding Information:
This research was supported by the Converging Research Center Program through the Ministry of Science, ICT and Future Planning (2013K000311); by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning ( 2013R1A1A2004505 ); and by the National Science Foundation Grant DMR10-05851 .


  • Ferromagnetic semiconductors
  • Magnetic anisotropy
  • Planar Hall effect

ASJC Scopus subject areas

  • General Materials Science
  • General Physics and Astronomy


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